| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Regoutz, A.
Engineering and Physical Sciences Research Council
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (28/28 displayed)
- 2023Rapid laser-induced low temperature crystallization of thermochromic VO2 sol-gel thin filmscitations
- 2022Lifetime effects and satellites in the photoelectron spectrum of tungsten metal
- 2021Lifetime effects and satellites in the photoelectron spectrum of tungsten metalcitations
- 2021Identification of hidden orbital contributions in the La_{0.65} Sr_{0.35} MnO_{3} valence band
- 2021Thermal and oxidation stability of TixW1−x diffusion barriers investigated by soft and hard x-ray photoelectron spectroscopycitations
- 2021Thermal and oxidation stability of Ti_{x}W_{1−x} diffusion barriers investigated by soft and hard x-ray photoelectron spectroscopy
- 2021Identification of hidden orbital contributions in the La$_{0.65}$Sr$_{0.35}$MnO$_3$ valence bandcitations
- 2021Identification of hidden orbital contributions in the La0.65Sr0.35MnO3 valence bandcitations
- 2020Understanding metal synergy in heterodinuclear catalysts for the copolymerization of CO₂ and epoxides
- 2020Effects of nitridation on SiC/SiO2 structures studied by hard X-ray photoelectron spectroscopy
- 2020Effects of nitridation on SiC/SiO(2)structures studied by hard X-ray photoelectron spectroscopycitations
- 2020Experimental and theoretical investigation of the chemical exfoliation of Cr-based MAX phase particles
- 2020Understanding metal synergy in heterodinuclear catalysts for the copolymerization of CO2 and epoxidescitations
- 2018A hard x-ray photoemission study of transparent conducting fluorine-doped tin dioxide
- 2018Copper (I) Selenocyanate (CuSeCN) as a Novel Hole-Transport Layer for Transistors, Organic Solar Cells, and Light-Emitting Diodes
- 2018Role of spin-orbit coupling in the electronic structure of IrO2citations
- 2018NASICON LiM2(PO4)(3) electrolyte (M = Zr) and electrode (M = Ti) materials for all solid-state Li-ion batteries with high total conductivity and low interfacial resistance
- 2018A PNA-based Lab-on-PCB diagnostic platform for rapid and high sensitivity DNA quantification.citations
- 2018Revealing spin-orbit coupling signatures in the electronic structure of IrO2citations
- 2017PdIn intermetallic nanoparticles for the hydrogenation of CO2 to methanolcitations
- 2017Quantifying the critical thickness of electron hybridization in spintronics materialscitations
- 2017Quantifying the critical thickness of electron hybridization in spintronics materialscitations
- 2016Spatially resolved TiOx phases in switched RRAM devices using soft X-ray spectromicroscopycitations
- 2016Spatially resolved TiOx phases in switched RRAM devices using soft X-ray spectromicroscopycitations
- 2016Spatially resolved TiOx phases in switched RRAM devices using soft X-ray spectromicroscopy.citations
- 2016Spatially resolved TiO x phases in switched RRAM devices using soft X-ray spectromicroscopycitations
- 2016Band gap engineering of In2O3 by alloying with Tl2O3citations
- 2016Role and optimization of the active oxide layer in TiO2-based RRAMcitations
Places of action
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article
Role and optimization of the active oxide layer in TiO2-based RRAM
Abstract
TiO<sub>2</sub> is commonly used as the active switching layer in resistive random access memory. The electrical characteristics of these devices are directly related to the fundamental conditions inside the TiO<sub>2</sub> layer and at the interfaces between it and the surrounding electrodes. However, it is complex to disentangle the effects of film “bulk” properties and interface phenomena. The present work uses hard X-ray photoemission spectroscopy (HAXPES) at different excitation energies to distinguish between these regimes. Changes are found to affect the entire thin film, but the most dramatic effects are confined to an interface. These changes are connected to oxygen ions moving and redistributing within the film. Based on the HAXPES results, post-deposition annealing of the TiO<sub>2</sub> thin film was investigated as an optimisation pathway in order to reach an ideal compromise between device resistivity and lifetime. The structural and chemical changes upon annealing are investigated using X-ray absorption spectroscopy and are further supported by a range of bulk and surface sensitive characterisation methods. In summary, it is shown that the management of oxygen content and interface quality is intrinsically important to device behavior and that careful annealing procedures are a powerful device optimisation technique.