| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Borgatti, F.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2021Identification of hidden orbital contributions in the La_{0.65} Sr_{0.35} MnO_{3} valence band
- 2021Identification of hidden orbital contributions in the La$_{0.65}$Sr$_{0.35}$MnO$_3$ valence bandcitations
- 2021Identification of hidden orbital contributions in the La0.65Sr0.35MnO3 valence bandcitations
- 2020Direct insight into the band structure of SrNbO3citations
- 2018Charge-transfer in B-site-depleted NdGaO3/SrTiO3 heterostructurescitations
- 2017Quantifying the critical thickness of electron hybridization in spintronics materialscitations
- 2017Quantifying the critical thickness of electron hybridization in spintronics materialscitations
- 2016Observation of Distinct Bulk and Surface Chemical Environments in a Topological Insulator under Magnetic dopingcitations
- 2016Role and optimization of the active oxide layer in TiO2-based RRAMcitations
- 2014Synthesis of Bismuth-Based Materials by Electrodeposition
- 2014A combined ion scattering, photoemission, and DFT investigation on the termination layer of a La0.7Sr0.3MnO3 spin injecting electrodecitations
- 2013Conditions for the growth of smooth La0.7Sr0.3MnO3 thin films by pulsed electron ablationcitations
- 2012Surface X-ray diffraction analysis of Fe nanostructured films grown on c(2×2)-N/Cu(100)citations
- 2008Room-temperature spintronic effects in Alq3-based hybrid devicescitations
- 2002Anisotropy in c-oriented MgB2 thin films grown by pulsed laser depositioncitations
- 2001Growth of c-oriented MgB2 thin films by pulsed laser deposition: structural characterization and electronic anisotropycitations
Places of action
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article
Role and optimization of the active oxide layer in TiO2-based RRAM
Abstract
TiO<sub>2</sub> is commonly used as the active switching layer in resistive random access memory. The electrical characteristics of these devices are directly related to the fundamental conditions inside the TiO<sub>2</sub> layer and at the interfaces between it and the surrounding electrodes. However, it is complex to disentangle the effects of film “bulk” properties and interface phenomena. The present work uses hard X-ray photoemission spectroscopy (HAXPES) at different excitation energies to distinguish between these regimes. Changes are found to affect the entire thin film, but the most dramatic effects are confined to an interface. These changes are connected to oxygen ions moving and redistributing within the film. Based on the HAXPES results, post-deposition annealing of the TiO<sub>2</sub> thin film was investigated as an optimisation pathway in order to reach an ideal compromise between device resistivity and lifetime. The structural and chemical changes upon annealing are investigated using X-ray absorption spectroscopy and are further supported by a range of bulk and surface sensitive characterisation methods. In summary, it is shown that the management of oxygen content and interface quality is intrinsically important to device behavior and that careful annealing procedures are a powerful device optimisation technique.