| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Gobaut, B.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2019Atomic-Scale Study of Metal–Oxide Interfaces and Magnetoelastic Coupling in Self-Assembled Epitaxial Vertically Aligned Magnetic Nanocomposites
- 2018Strain-induced magnetization control in an oxide multiferroic heterostructurecitations
- 2017Structural and electronic properties of Bi2Se3 topological insulator thin films grown by pulsed laser depositioncitations
- 2017Quantifying the critical thickness of electron hybridization in spintronics materialscitations
- 2017Quantifying the critical thickness of electron hybridization in spintronics materialscitations
- 2016Role and optimization of the active oxide layer in TiO2-based RRAMcitations
Places of action
| Organizations | Location | People |
|---|
article
Role and optimization of the active oxide layer in TiO2-based RRAM
Abstract
TiO<sub>2</sub> is commonly used as the active switching layer in resistive random access memory. The electrical characteristics of these devices are directly related to the fundamental conditions inside the TiO<sub>2</sub> layer and at the interfaces between it and the surrounding electrodes. However, it is complex to disentangle the effects of film “bulk” properties and interface phenomena. The present work uses hard X-ray photoemission spectroscopy (HAXPES) at different excitation energies to distinguish between these regimes. Changes are found to affect the entire thin film, but the most dramatic effects are confined to an interface. These changes are connected to oxygen ions moving and redistributing within the film. Based on the HAXPES results, post-deposition annealing of the TiO<sub>2</sub> thin film was investigated as an optimisation pathway in order to reach an ideal compromise between device resistivity and lifetime. The structural and chemical changes upon annealing are investigated using X-ray absorption spectroscopy and are further supported by a range of bulk and surface sensitive characterisation methods. In summary, it is shown that the management of oxygen content and interface quality is intrinsically important to device behavior and that careful annealing procedures are a powerful device optimisation technique.