| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Rijnders, Guus
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2024Enhanced Piezoelectricity by Polarization Rotation through Thermal Strain Manipulation in PbZr<sub>0.6</sub>Ti<sub>0.4</sub>O<sub>3</sub> Thin Films
- 2024The effect of intrinsic magnetic order on electrochemical water splittingcitations
- 2024Stabilizing Perovskite Pb(Mg<sub>0.33</sub>Nb<sub>0.67</sub>)O<sub>3</sub>-PbTiO<sub>3</sub> Thin Films by Fast Deposition and Tensile Mismatched Growth Templatecitations
- 2023On the importance of the SrTiO3 template and the electronic contact layer for the integration of phase-pure low hysteretic Pb(Mg0.33Nb0.67)O3-PbTiO3 layers with Sicitations
- 2021Growth and crystallization of sio2/geo2 thin films on si(100) substratescitations
- 2021Growth and crystallization of sio 2 /geo 2 thin films on si(100) substratescitations
- 2020Single-Source, Solvent-Free, Room Temperature Deposition of Black γ-CsSnI 3 Filmscitations
- 2020Origins of infrared transparency in highly conductive perovskite stannate BaSnO3citations
- 2020Single‐Source, Solvent‐Free, Room Temperature Deposition of Black γ‐CsSnI3 Filmscitations
- 2020Epitaxial growth of full range of compositions of (1 1 1) PbZr1- xTixO3 on GaNcitations
- 2017Tuning of large piezoelectric response in nanosheet-buffered lead zirconate titanate films on glass substratescitations
- 2017One step toward a new generation of C-MOS compatible oxide PN junctionscitations
- 2016Long-range domain structure and symmetry engineering by interfacial oxygen octahedral coupling at heterostructure interfacecitations
- 2016A flexoelectric microelectromechanical system on siliconcitations
- 2015Epitaxy on Demandcitations
- 2014Patterning of Epitaxial Perovskites from Micro and Nano Molded Stencil Maskscitations
- 2012High-Temperature Magnetic Insulating Phase in Ultrathin La0.67Sr0.33MnO3 Filmscitations
- 2011Metallic and Insulating Interfaces of Amorphous SrTiO3-Based Oxide Heterostructurescitations
- 2009Low-temperature solution synthesis of chemically functional ferromagnetic FePtAu nanoparticlescitations
- 2007Magnetic effects at the interface between non-magnetic oxidescitations
Places of action
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article
Epitaxy on Demand
Abstract
<jats:p>Perovskite oxide heteroepitaxy is realized on the top of inorganic nanosheets that are covering the amorphous oxide surfaces of Si substrates. Utilizing pulsed laser deposition, thin films of SrRuO<jats:sub>3</jats:sub> in a (001)<jats:sub>pc</jats:sub> and (110)<jats:sub>pc</jats:sub> orientation on nanosheets of Ca<jats:sub>2</jats:sub>Nb<jats:sub>3</jats:sub>O<jats:sub>10</jats:sub> and Ti<jats:sub>0.87</jats:sub>O<jats:sub>2</jats:sub> are grown, respectively. The two types of nanosheets are patterned to locally tailor the crystallographic orientation and properties of SrRuO<jats:sub>3</jats:sub>. The success of our approach is demonstrated by electron backscatter diffraction and spatial magnetization maps. An unprecedented control of perovskite film growth on arbitrary substrates is illustrated in this work, and the methods that are developed to deposit SrRuO<jats:sub>3</jats:sub> thin films are a viable starting point for growth of artificial heteroepitaxial thin films that require a bottom electrode. Control is not just reached in the direction of film growth, as the crystal orientation and film properties are regulated laterally on the surface of micropatterned nanosheets. Local control of magnetic properties is illustrated, which holds out prospects for the fabrication of next‐generation devices like noncollinear magnetic random access memories.</jats:p>