| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Gelinck, Gerwin H.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2023Origin and Energy of Intra-Gap States in Sensitive Near-Infrared Organic Photodiodescitations
- 2023Origin and Energy of Intra-Gap States in Sensitive Near-Infrared Organic Photodiodescitations
- 2022Multidimensional Perovskites for High Detectivity Photodiodescitations
- 2021A thin and flexible scanner for fingerprints and documents based on metal halide perovskitescitations
- 2021A thin and flexible scanner for fingerprints and documents based on metal halide perovskitescitations
- 2021Ultralow dark current in near-infrared perovskite photodiodes by reducing charge injection and interfacial charge generationcitations
- 2020On the origin of dark current in organic photodiodescitations
- 2019Short-channel vertical organic field-effect transistors with high on/off ratioscitations
- 2018A universal route to fabricate n-i-p multi-junction polymer solar cells via solution processingcitations
- 2018A universal route to fabricate n-i-p multi-junction polymer solar cells via solution processingcitations
- 2016Data retention in organic ferroelectric resistive switchescitations
- 2016Data retention in organic ferroelectric resistive switchescitations
- 2015Field-effect memory transistors based on arrays of nanowires of a ferroelectric polymer
- 2015Surface directed phase separation of semiconductor ferroelectric polymer blends and their use in non-volatile memoriescitations
- 2012Charge transport in amorphous InGaZnO thin film transistorscitations
- 2011Single-step solution processing of small-molecule organic semiconductor field-effect transistors at high yieldcitations
- 2011Multilevel information storage in ferroelectric polymer memoriescitations
Places of action
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article
Surface directed phase separation of semiconductor ferroelectric polymer blends and their use in non-volatile memories
Abstract
The polymer phase separation of P(VDF-TrFE):F8BT blends is studied in detail. Its morphology is key to the operation and performance of memory diodes. In this study, it is demonstrated that it is possible to direct the semiconducting domains of a phase-separating mixture of P(VDF-TrFE) and F8BT in a thin film into a highly ordered 2D lattice by means of surface directed phase separation. Numerical simulation of the surface-controlled de-mixing process provides insight in the ability of the substrate pattern to direct the phase separation, and hence the regularity of the domain pattern in the final dry blend layer. By optimizing the ratio of the blend components, the number of electrically active semiconductor domains is maximized. Pattern replication on a cm-scale is achieved, and improved functional device performance is demonstrated in the form of a 10-fold increase of the ON-current and a sixfold increase in current modulation. This approach therefore provides a simple and scalable means to higher density integration, the ultimate target being a single semiconducting domain per memory cell.