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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Kumar, Amit
Queen's University Belfast
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (23/23 displayed)
- 2023Ferrielectricity in the archetypal antiferroelectric, PbZrO3citations
- 2023Unraveling Spatiotemporal Transient Dynamics at the Nanoscale via Wavelet Transform-Based Kelvin Probe Force Microscopycitations
- 2023Ferroelectric domain wall p-n junctionscitations
- 2022Conducting ferroelectric domain walls emulating aspects of neurological behaviorcitations
- 2022Deterministic Dual control of phase competition in Strained BiFeO3 : A Multi-Parametric Structural Lithography Approach
- 2020Direct Processing of PbZr0.53Ti0.47O3 Films on Glass and Polymeric Substratescitations
- 2020Nanodomain Patterns in Ultra-Tetragonal Lead Titanate (PbTiO3)citations
- 2018Revealing the interplay of structural phase transitions and ferroelectric switching in mixed phase BiFeO3citations
- 2018Electromechanical-mnemonic effects in BiFeO3 for electric field history dependent crystallographic phase patterningcitations
- 2017Functional and structural effects of layer periodicity in chemicalsolution-deposited Pb(Zr,Ti)O3thin filmscitations
- 2017Mapping grain boundary heterogeneity at the nanoscale in a positive temperature coefficient of resistivity ceramiccitations
- 2016Local probing of ferroelectric and ferroelastic switching through stress-mediated piezoelectric spectroscopycitations
- 2015Sub-nA spatially resolved conductivity profiling of surface and interface defects in ceria filmscitations
- 2014Spatially-resolved mapping of history-dependent coupled electrochemical and electronical behaviors of electroresistive NiOcitations
- 2014Influence of a Single Grain Boundary on Domain Wall Motion in Ferroelectricscitations
- 2013Nanoscale mapping of oxygen vacancy kinetics in nanocrystalline Samarium doped ceria thin filmscitations
- 2013Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memoriescitations
- 2013Nanometer-scale mapping of irreversible electrochemical nucleation processes on solid Li-ion electrolytescitations
- 2013Nanoscale Probing of Voltage Activated Oxygen Reduction/Evolution Reactions in Nanopatterned (LaxSr1-x)CoO3-delta Cathodescitations
- 2013Giant energy density in [001]-textured Pb(Mg1/3Nb2/3)O-3-PbZrO3-PbTiO3 piezoelectric ceramicscitations
- 2011Measuring oxygen reduction/evolution reactions on the nanoscalecitations
- 2007Adsorption-controlled molecular-beam epitaxial growth of BiFeO3citations
- 2006Multiferroic domain dynamics in strained strontium titanatecitations
Places of action
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article
Influence of a Single Grain Boundary on Domain Wall Motion in Ferroelectrics
Abstract
Epitaxial tetragonal 425 and 611 nm thick Pb(ZrTi)O (PZT) films are deposited by pulsed laser deposition on SrRuO-coated (100) SrTiO 24° tilt angle bicrystal substrates to create a single PZT grain boundary with a well-defined orientation. On either side of the bicrystal boundary, the films show square hysteresis loops and have dielectric permittivities of 456 and 576, with loss tangents of 0.010 and 0.015, respectively. Using piezoresponse force microscopy (PFM), a decrease in the nonlinear piezoelectric response is observed in the vicinity (720-820 nm) of the grain boundary. This region represents the width over which the extrinsic contributions to the piezoelectric response (e.g., those associated with the domain density/configuration and/or the domain wall mobility) are influenced by the presence of the grain boundary. Transmission electron microscope (TEM) images collected near and far from the grain boundary indicate a strong preference for (101)/(1-01) type domain walls at the grain boundary, whereas (011)/(01-1) and (101)/(1-01) are observed away from this region. It is proposed that the elastic strain field at the grain boundary interacts with the ferro-electric/elastic domain structure, stabilizing (101)/(1-01) rather than (011)/(01-1) type domain walls, which inhibits domain wall motion under applied field and decreases non-linearity.