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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Acton, Orb
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2013Effects of self-assembled monolayer structural order, surface homogeneity and surface energy on pentacene morphology and thin film transistor device performancecitations
- 2012Bottom-contact small-molecule n-type organic field effect transistors achieved via simultaneous modification of electrode and dielectric surfacescitations
- 2012Solid-state densification of spun-cast self-assembled monolayers for use in ultra-thin hybrid dielectricscitations
- 2011Simultaneous modification of bottom-contact electrode and dielectric surfaces for organic thin-film transistors through single-component spin-cast monolayerscitations
- 2010Effect of the phenyl ring orientation in the polystyrene buffer layer on the performance of pentacene thin-film transistorscitations
- 2009Study on the formation of self-assembled monolayers on sol-gel processed hafnium oxide as dielectric layerscitations
Places of action
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article
Simultaneous modification of bottom-contact electrode and dielectric surfaces for organic thin-film transistors through single-component spin-cast monolayers
Abstract
An efficient process is developed by spin-coating a single-component, self-assembled monolayer (SAM) to simultaneously modify the bottom-contact electrode and dielectric surfaces of organic thin-film transistors (OTFTs). This effi cient interface modifi cation is achieved using n-alkyl phosphonic acid based SAMs to prime silver bottom-contacts and hafnium oxide (HfO<sub>2</sub>) dielectrics in low-voltage OTFTs. Surface characterization using near edge X-ray absorption fi ne structure (NEXAFS) spectroscopy, X-ray photoelectron spectroscopy (XPS), attenuated total reflectance Fourier transform infrared (ATR-FTIR) spectroscopy, atomic force microscopy (AFM), and spectroscopic ellipsometry suggest this process yields structurally well-defi ned phosphonate SAMs on both metal and oxide surfaces. Rational selection of the alkyl length of the SAM leads to greatly enhanced performance for both n-channel (C <sub>60</sub>) and p-channel (pentacene) based OTFTs. Specifi cally, SAMs of n-octylphos-phonic acid (OPA) provide both low-contact resistance at the bottom-contact electrodes and excellent interfacial properties for compact semiconductor grain growth with high carrier mobilities. OTFTs based on OPA modifi ed silver electrode/HfO<sub>2</sub> dielectric bottom-contact structures can be operated using <3V with low contact resistance (down to 700 Ohm-cm), low subthreshold swing (as low as 75 mV dec<sup>-1</sup>), high on/off current ratios of 107, and charge carrier mobilities as high as 4.6 and 0.8 cm <sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>, for C60 and pentacene, respectively. These results demonstrate that this is a simple and efficient process for improving the performance of bottom-contact OTFTs. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.