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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Stingelin, Natalie
University of Bordeaux
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (23/23 displayed)
- 2024Using spatial confinement to decipher polymorphism in the organic semiconductor p-DTS(FBTTh2)2citations
- 2023Conjugated polymer blends for faster organic mixed conductorscitations
- 2023Mission Immiscible: Overcoming the Miscibility Limit of Semiconducting:Ferroelectric Polymer Blends via Vitrificationcitations
- 2022Conjugated Polymer Blends for Faster Organic Mixed Conductorscitations
- 2021Improving molecular alignment and charge percolation in semiconducting polymer films with highly localized electronic states through tailored thermal annealingcitations
- 2020High-density polyethylene—an inert additive with stabilizing effects on organic field-effect transistorscitations
- 2020Enhanced Electrocaloric Response of Vinylidene Fluoride–Based Polymers via One‐Step Molecular Engineeringcitations
- 2020The Importance of Quantifying the Composition of the Amorphous Intermixed Phase in Organic Solar Cellscitations
- 2019Managing local order in conjugated polymer blends via polarity contrastcitations
- 2019The Role of Morphology in Optically Switchable Transistors Based on a Photochromic Molecule/p‐Type Polymer Semiconductor Blendcitations
- 2015Polytellurophenes provide imaging contrast towards unravelling the structure–property–function relationships in semiconductor:insulator polymer blendscitations
- 2015Microstructured organic ferroelectric thin film capacitors by solution micromoldingcitations
- 2015Entanglements in Marginal Solutions: A Means of Tuning Pre-Aggregation of Conjugated Polymers with Positive Implications for Charge Transportcitations
- 2014Additive-assisted supramolecular manipulation of polymer:fullerene blend phase morphologies and its influence on photophysical processescitations
- 2014Tailoring the void space and mechanical properties in electrospun scaffolds towards physiological ranges
- 2014Bis(triisopropylsilylethynyl)pentacene/Au(111) interface: Coupling, molecular orientation, and thermal stabilitycitations
- 2013Microstructure formation in molecular and polymer semiconductors assisted by nucleation agentscitations
- 2012Processing and Low Voltage Switching of Organic Ferroelectric Phase-Separated Bistable Diodescitations
- 2012Ferroelectric Phase Diagram of PVDF:PMMAcitations
- 2011Single-step solution processing of small-molecule organic semiconductor field-effect transistors at high yieldcitations
- 2011Spinodal Decomposition of Blends of Semiconducting and Ferroelectric Polymerscitations
- 2011Structural and Electrical Characterization of ZnO Films Grown by Spray Pyrolysis and Their Application in Thin-Film Transistorscitations
- 2011Wire-bar coating of semiconducting polythiophene / insulating polyethylene blend thin films for organic transistors.citations
Places of action
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article
Structural and Electrical Characterization of ZnO Films Grown by Spray Pyrolysis and Their Application in Thin-Film Transistors
Abstract
<p>The role of the substrate temperature on the structural, optical, and electronic properties of ZnO thin films deposited by spray pyrolysis using a zinc acetate precursor solution is reported. Analysis of the precursor compound using thermogravimentry and differential scanning calorimetry indicates complete decomposition of the precursor at around 350 degrees C. Film characterization using Fourier Transform Infrared Spectroscopy (FTIR), photoluminescence spectroscopy (PL), and ultraviolet-visible (UV-Vis) optical transmission spectroscopy suggests the onset of ZnO growth at temperatures as low as 100 degrees C as well as the transformation to a polycrystalline phase at deposition temperatures >200 degrees C. Atomic force microscopy (AFM) and X-ray diffraction (XRD) reveal that as-deposited films exhibit low surface roughness (rms approximate to 2.9 nm at 500 degrees C) and a crystal size that is monotonously increasing from 8 to 32 nm for deposition temperatures in the range of 200-500 degrees C. The latter appears to have a direct impact on the field-effect electron mobility, which is found to increase with increasing ZnO crystal size. The maximum mobility and current on/off ratio is obtained from thin-film transistors fabricated using ZnO films deposited at >400 degrees C yielding values on the order of 25 cm(2) V(-1)s(-1) and 10(6), respectively.</p>