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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Zhang, Xin
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2023Surface Modulation via Conjugated Bithiophene Ammonium Salt for Efficient Inverted Perovskite Solar Cellscitations
- 2022An amorphous sodium aluminate hydrate phase mediates aluminum coordination changes in highly alkaline sodium hydroxide solutionscitations
- 2022Niobium and Tantalum complexes derived from the acids Ph 2 C(X)CO 2 H (X = OH, NH 2 ): synthesis, structure and ROP capabilitycitations
- 2021Alkoxy-functionalized schiff-base ligation at aluminum and zinc: Synthesis, structures and rop capabilitycitations
- 2016InGaN nanowires with high InN molar fraction: growth, structural and optical propertiescitations
- 2016Agromining: producing Ni salts from the biomass of hyperaccumulator plants
- 2015Complexities in the Molecular Spin Crossover Transitioncitations
- 2014Changing molecular band offsets in polymer blends of (P3HT/P(VDF-TrFE)) poly(3-hexylthiophene) and poly(vinylidene fluoride with trifluoroethylene) due to ferroelectric polingcitations
- 2014Substrate and temperature dependence of the formation of the Earth abundant solar absorber Cu2ZnSnS4 by ex situ sulfidation of cosputtered Cu-Zn-Sn filmscitations
- 2013Polyphenols grafting to bioactive glasses and glass-ceramics
- 2013Resonant photoemission and spin polarization of Co1-xFe xS2citations
- 2012Comparison of ultrasonic reflectometry and FTIR analysis for thermal ageing effect detection for paint films on steel plates
- 2009Carrier dynamics and quantum confinement in type II ZB-WZ InP nanowire homostructures
- 2008High purity GaAs nanowires free of planar defectscitations
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article
High purity GaAs nanowires free of planar defects
Abstract
<p>We investigate how to tailor the structural, crystallographic and optical properties of GaAs nanowires. Nanowires were grown by Au nanoparticle-catalyzed metalorganic chemical vapor deposition. A high arsine flow rate, that is, a high ratio of group V to group III precursors, imparts significant advantages. It dramatically reduces planar crystallographic defects and reduces intrinsic carbon dopant incorporation. Increasing V/III ratio further, however, instigates nanowire kinking and increases nanowire tapering. By choosing an intermediate V/III ratio we achieve uniform, vertically aligned GaAs nanowires, free of planar crystallographic defects, with excellent optical properties and high purity. These findings will greatly assist the development of future GaAs nanowire-based electronic and optoelectronic devices, and are expected to be more broadly relevant to the rational synthesis of other III-V nanowires.</p>