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| Naji, M. |
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| Motta, Antonella |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Petrov, R. H. | Madrid |
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| Kočí, Jan | Prague |
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| Azam, Siraj |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Yang, D.
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Topics
Publications (10/10 displayed)
- 2024Improving the interfacial adhesion between recycled carbon fibres and polyphenylene sulphide by bio-inspired dopamine for advanced composites manufacturing
- 2024Investigation of the Dynamic Behaviour of H2 and D2 in a Kinetic Quantum Sieving System
- 2020Efficient light-emitting diodes from mixed-dimensional perovskites on a fluoride interfacecitations
- 2014Micromechanical experimental investigation of mudstonescitations
- 2011Carrier lifetime studies in diode structures on Si substrates with and without Ge dopingcitations
- 2010Designing for reliability using a new Wafer Level Package structure
- 2008Die Fracture Probability Prediction and Design Guidelines for Laminate-Based Over-Molded Packages
- 2007Multifunctional Nanocrystalline Thin Films of Er2O3: Interplay between Nucleation Kinetics and Film Characteristicscitations
- 2007Effect of filler concentration of rubbery shear and bulk modulus of molding compounds
- 2007Er2O3 as a high-K dielectric candidatecitations
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article
Multifunctional Nanocrystalline Thin Films of Er2O3: Interplay between Nucleation Kinetics and Film Characteristics
Abstract
In this study, thin films of Ef(2)O(3) are deposited by low-pressure metal-organic chemical vapor deposition (MOCVD) using a tris(isopropylcyclopentadienyl)erbium precursor and 02 on various substrates, including p-type Si(100), Si(111), Corning glass, and c-axis-oriented alpha-Al2O3(0001). The resulting films are extensively characterized in order to demonstrate their applicability as antireflective and protective coatings and as high-k gate dielectrics. The interplay existing among the substrate, the nucleation kinetics, and the resulting structural, morphological, optical, and electrical properties of Er2O3 thin films is explored. Fast nucleation governed by surface energy minimization characterizes the growth of (111)-oriented Er2O3 on Si(100), glass, and alpha-Al2O3. Conversely, nonhomogeneous nucleation leads to polycrystalline Er2O3 on Si(111) substrates. Er2O3 films grown on Si(100) possess superior characteristics. A high refractive index of 2.1 at 589.3 nm, comparable to the value for bulk single crystalline Er2O3, a high transparency in the near UV-vis range, and an optical bandgap of 6.5 eV make Er2O3 interesting as an antireflective and protective coating. A static dielectric constant of 12-13 and a density of interface traps as low as 4.2 x 10(10) cm(2) eV(-1) for 5-10 nm thick Er2O3 layers grown on Si(100) render the present Er2O3 films interesting also as high-k dielectrics in complementary metal oxide semiconductor (CMOS) devices.