| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Suvorova, Alexandra
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2018Nanogeochemistry of hydrothermal magnetitecitations
- 2018Nanoscale partitioning of Ru, Ir, and Pt in base-metal sulfides from the Caridad chromite deposit, Cubacitations
- 2016Thermally stable coexistence of liquid and solid phases in gallium nanoparticlescitations
- 2015Structural transformation of implanted diamond layers during high temperature annealingcitations
- 2014Effect of Interface energy and electron transfer on shape, plasmon resonance and SERS activity of supported surfactant-free gold nanoparticlescitations
- 2014Transformation of YSZ under high fluence argon ion implantationcitations
- 2013Conventional and analytical electron microscopy study of phase transformation in implanted diamond layers
- 2011Effects of ad-atom diffusivity throughout Sb-mediated formation of Ge/Si nanoislands
- 2008Structural and optical properties of ZnO thin films by rf magnetron sputtering with rapid thermal annealingcitations
- 2007Application of two-electron spectroscopy in reflection for studying electronic structure of surfaces and thin filmscitations
- 2007Multifunctional Nanocrystalline Thin Films of Er2O3: Interplay between Nucleation Kinetics and Film Characteristicscitations
- 2007Er2O3 as a high-K dielectric candidatecitations
- 2006Magnesium oxide as a candidate high-k gate dielectriccitations
- 2005ZrO2 film interfaces with Si and SiO2citations
- 2003Study of interface formation of (Ba,Sr)TiO3 thin films grown by rf sputter deposition on bare Si and thermal SiO2/Si substrates
- 2002Study of interface formation of (Ba,Sr)TiO3 thin films grown by rf sputter deposition on bare Si and thermal SiO2/Si substrates
- 2001Anisotropy of the spatial distribution of In(Ga)As quantum dots in In(Ga)As-GaAs multilayer heterostructures studied by X-ray and synchrotron diffraction and transmission electron microscopycitations
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article
Multifunctional Nanocrystalline Thin Films of Er2O3: Interplay between Nucleation Kinetics and Film Characteristics
Abstract
In this study, thin films of Ef(2)O(3) are deposited by low-pressure metal-organic chemical vapor deposition (MOCVD) using a tris(isopropylcyclopentadienyl)erbium precursor and 02 on various substrates, including p-type Si(100), Si(111), Corning glass, and c-axis-oriented alpha-Al2O3(0001). The resulting films are extensively characterized in order to demonstrate their applicability as antireflective and protective coatings and as high-k gate dielectrics. The interplay existing among the substrate, the nucleation kinetics, and the resulting structural, morphological, optical, and electrical properties of Er2O3 thin films is explored. Fast nucleation governed by surface energy minimization characterizes the growth of (111)-oriented Er2O3 on Si(100), glass, and alpha-Al2O3. Conversely, nonhomogeneous nucleation leads to polycrystalline Er2O3 on Si(111) substrates. Er2O3 films grown on Si(100) possess superior characteristics. A high refractive index of 2.1 at 589.3 nm, comparable to the value for bulk single crystalline Er2O3, a high transparency in the near UV-vis range, and an optical bandgap of 6.5 eV make Er2O3 interesting as an antireflective and protective coating. A static dielectric constant of 12-13 and a density of interface traps as low as 4.2 x 10(10) cm(2) eV(-1) for 5-10 nm thick Er2O3 layers grown on Si(100) render the present Er2O3 films interesting also as high-k dielectrics in complementary metal oxide semiconductor (CMOS) devices.