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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Casati, R. |
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Kočí, Jan | Prague |
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Ospanova, Alyiya |
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Ali, M. A. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Wojcik, Tomasz
TU Wien
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Publications (7/7 displayed)
- 2024RuAl Thin‐Film Deposition by DC Magnetron Sputtering
- 2023Quaternary diborides-improving the oxidation resistance of TiB2 +/- z coatings by disilicide alloyingcitations
- 2023Materials Characterization / Microstructural insights into creep of Ni-based alloy 617 at 700 °C provided by electron microscopy and modellingcitations
- 2022Magnetron sputtered NiAl/TiB<sub>x</sub> multilayer thin filmscitations
- 2019Formation of "carbide-free zones" resulting from the interplay of C redistribution and carbide precipitation during bainitic transformationcitations
- 2016Influence of NbC-Precipitation on Hot Ductility in Microalloyed Steel - TEM Study and Thermokinetic Modelingcitations
- 2012Synthesis and electrical characterization of intrinsic and in situ doped Si nanowires using a novel precursorcitations
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article
RuAl Thin‐Film Deposition by DC Magnetron Sputtering
Abstract
The intermetallic transition metal B2-structured aluminide RuAl is a candidate material for use in various applications, including microelectronics and structural materials under demanding conditions, for example, as oxidation- and corrosionresistantmaterials. In contrast to other B2 transition metal aluminides, which usually suffer from brittle material behavior at room temperature, RuAl exhibits comparatively good room-temperature ductility, in combination with further promising properties. Therefore, RuAl thin films are attracting interest as potential protective and functional surface engineering materials. The synthesis of RuAl thin films by physical vapor deposition, especially magnetron sputtering, is however complex and utilizes codeposition and multilayer from elemental sputtering targets and subsequent annealing procedures. Herein, an alternative route toward single-phase B2-structured RuAl thin films by nonreactive DC magnetron sputter deposition at low substrate temperature from a powdermetallurgically manufactured Ru50Al50 compound target is described. The influence of the deposition parameters on the constitution, microstructure, and selected properties of RuAl thin films is studied. It is shown that especially the Ar process gas pressure has a significant impact on their composition and morphology. X-ray diffraction and transmission electron microscopy with selected-area electron diffraction indicate that the films are single-phase RuAl with B2 structure.