693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Wellmann, Peter J.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (208/208 displayed)
- 2024Synthesis and Characterization of BaZrS3 Thin Films via Stacked Layer Methodology: A Comparative Study of BaZrS3 on Zirconium Foil and Silicon Carbide Substratescitations
- 2024Synthesis of BaZrS<sub>3</sub> and BaS<sub>3</sub> Thin Films: High and Low Temperature Approachescitations
- 2023Novel Photonic Applications of Silicon Carbidecitations
- 2023Fabrication of SiC-on-Insulator (SiCOI) Layers by Chemical Vapor Deposition of 3C-SiC on Si-in-Insulator Substrates at Low Deposition Temperatures of 1120 °Ccitations
- 2022Multiscale Simulations for Defect-Controlled Processing of Group IV Materialscitations
- 2022Impact of Mechanical Stress and Nitrogen Doping on the Defect Distribution in the Initial Stage of the 4H-SiC PVT Growth Processcitations
- 2021In Situ Visualization of the Ammonothermal Crystallization Process by X-ray Technologycitations
- 2021Special Equipment for Ammonothermal Processescitations
- 2021Analysis of compositional gradients in cu(In,ga)(s,se)2 solar cell absorbers using energy dispersive x-ray analysis with different acceleration energiescitations
- 2021Overgrowth of Protrusion Defects during Sublimation Growth of Cubic Silicon Carbide Using Free-Standing Cubic Silicon Carbide Substratescitations
- 2021New approaches and understandings in the growth of cubic silicon carbidecitations
- 2020Impact of Varying Parameters on the Temperature Gradients in 100 mm Silicon Carbide Bulk Growth in a Computer Simulation Validated by Experimental Resultscitations
- 2020Prospects of bulk growth of 3C-SiC using sublimation growthcitations
- 2020Investigation of the Growth Kinetics of SiC Crystals during Physical Vapor Transport Growth by the Application of In Situ 3D Computed Tomography Visualizationcitations
- 2020Intentional Incorporation and Tailoring of Point Defects during Sublimation Growth of Cubic Silicon Carbide by Variation of Process Parameterscitations
- 2020Flow stability, convective heat transfer and chemical reactions in ammonothermal autoclaves—insights by in situ measurements of fluid temperaturescitations
- 2020Influence of the growth interface shape on the defect characteristics in the facet region of 4H-SiC single crystalscitations
- 2020Epitaxial Metal Halide Perovskites by Inkjet-Printing on Various Substratescitations
- 2020On the importance of dislocation flow in continuum plasticity models for semiconductor materialscitations
- 2020The 50th Anniversary of the German Association for Crystal Growth, DGKK
- 2019Advances in in situ SiC growth analysis using cone beam computed tomographycitations
- 2019Impacts of carrier capture processes in the thermal quenching of photoluminescence in Al–N co-doped SiCcitations
- 2019Optimization of the SiC Powder Source Material for Improved Process Conditions During PVT Growth of SiC Boulescitations
- 2019Growth of large-area, stress-free, and bulk-like 3C-SiC (100) using 3C-SiC-on-Si in vapor phase growthcitations
- 2019Vacuum-free and highly dense nanoparticle based low-band-gap CuInSe2 thin-films manufactured by face-to-face annealing with application of uniaxial mechanical pressurecitations
- 2019Vapor growth of 3C-SiC using the transition layer of 3C-SiC on Si CVD templatescitations
- 2019Influence of morphological changes in a source material on the growth interface of 4H-SiC single crystalscitations
- 2019Optimization of the SiC powder source size distribution for the sublimation growth of long crystals boulescitations
- 2019Comparison of achievable contrast features in computed tomography observing the growth of a 4H-SiC bulk crystalcitations
- 2019Limitations during vapor phase growth of bulk (100) 3C-SiC using 3C-SiC-on-SiC seeding stackscitations
- 2019Analysis of the basal plane dislocation density and thermomechanical stress during 100 mm PVT growth of 4H-SiCcitations
- 2019An adhesive bonding approach by hydrogen silsesquioxane for silicon carbide-based LED applicationscitations
- 2019Modeling of the PVT growth process of bulk 3C-SiC-growth process development and challenge of the right materials data basecitations
- 2019Annealing-induced changes in the nature of point defects in sublimation-grown cubic silicon carbidecitations
- 2019Deep electronic levels in n-type and p-type 3C-SiCcitations
- 2019Annealing-Induced Changes in the Nature of Point Defects in Sublimation-Grown Cubic Silicon Carbidecitations
- 2019Tracking of the growth interface during pvt-growth of SiC boules using a X-ray computed tomography setupcitations
- 2018From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reductioncitations
- 2018Growth conditions and in situ computed tomography analysis of facetted bulk growth of SiC boulescitations
- 2018Solution Growth of Silicon Carbide Using the Vertical Bridgman Methodcitations
- 2018Review of SiC crystal growth technologycitations
- 2018Tuning the Properties of CZTS Films by Controlling the Process Parameters in Cost-Effective Non-vacuum Techniquecitations
- 2018In situ X-ray monitoring of transport and chemistry of Ga-containing intermediates under ammonothermal growth conditions of GaNcitations
- 2017Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (1 0 0) seeding layerscitations
- 2017Growth, defects and doping of 3C-SiC on hexagonal polytypescitations
- 2017Depth-resolved and temperature dependent analysis of phase formation processes in Cu–Zn–Sn–Se films on ZnO substratescitations
- 2017Growing bulk-like 3C-SiC from seeding material produced by CVDcitations
- 2017Ammonothermal Synthesis of Earth-Abundant Nitride Semiconductors ZnSiN2 and ZnGeN2 and Dissolution Monitoring by In Situ X-ray Imagingcitations
- 20173C-sic bulk sublimation growth on CVD hetero-epitaxial seeding layerscitations
- 2017Depth-resolved and temperature-dependent analysis of phase formation mechanisms in selenized Cu-Zn-Sn precursors by Raman spectroscopycitations
- 2017Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications – SiC, GaN, Ga2O3, and Diamondcitations
- 2017Solubility and dissolution kinetics of GaN in supercritical ammonia in presence of ammonoacidic and ammonobasic mineralizerscitations
- 2016Chemical stability of carbon-based inorganic materials for in situ x-ray investigations of ammonothermal crystal growth of nitridescitations
- 2016Physical vapor growth of double position boundary free, quasi-bulk 3C-SiC on high quality 3C-SiC on Si CVD templatescitations
- 2016Solar driven energy conversion applications based on 3C-SiCcitations
- 2016Cubic silicon carbide as a potential photovoltaic materialcitations
- 2016High temperature solution growth of SiC by the vertical Bridgman method using a metal free Si-C-melt at 2300 °Ccitations
- 2016Application of in-situ 3D computed tomography during PVT growth of 4H-SiC for the study of source material consumption under varying growth conditionscitations
- 2016Depth-resolved and temperature-dependent analysis of phase formation mechanisms in selenized Cu-Zn-Sn precursors by Raman spectroscopy
- 2015Synthesis of In2Se3 and Cu2-xSe Micro- and Nanoparticles with Microwave-Assisted Solvothermal and Aqueous Redox Reactions for the Preparation and Stabilization of Printable Precursors for a CuInSe2 Solar Cell Absorber Layercitations
- 2015Numerical reactive diffusion modeling of stacked elemental layer rapid thermal annealed chalcopyrite absorber layer formationcitations
- 2015Growth of sic bulk crystals for application in power electronic devices - Process design, 2D and 3D X-ray in situ visualization and advanced dopingcitations
- 2015Quantitative study on the role of supersaturation during sublimation growth on the yield of 50 mm diameter 3C-SiCcitations
- 2015Ceramic liner technology for ammonoacidic synthesiscitations
- 2015Progress on Numerical Reactive Diffusion Modeling of CuInSe2 Phase Formation for Solar Cell Applications
- 2015Single domain 3C-SiC growth on off-oriented 4H-SiC Substratescitations
- 2015Characterization of kesterite thin films fabricated by rapid thermal processing of stacked elemental layers using spatially resolved cathodoluminescencecitations
- 2015Towards the Growth of SiGeC Epitaxial Layers for the Application in Si Solar Cellscitations
- 2015Low temperature formation of CuIn1 - XGaxSe2solar cell absorbers by all printed multiple species nanoparticulate Se + Cu-In + Cu-Ga precursorscitations
- 2015Optimization of growth parameters for growth of high quality heteroepitaxial 3C-SiC films at 1200 °ccitations
- 2015Determination of GaN solubility in supercritical ammonia with NH4F and NH4Cl mineralizer by in situ x-ray imaging of crystal dissolutioncitations
- 2014Alternative approaches of SiC & related wide bandgap materials in light emitting & solar cell applications
- 2014Formation of Cu2SnSe3 from stacked elemental layers investigated by combined in situ X-ray diffraction and differential scanning calorimetry techniquescitations
- 2014Towards X-ray in-situ visualization of ammonothermal crystal growth of nitridescitations
- 2014Carrier lifetimes and influence of in-grown defects in N-B Co-doped 6H-SiCcitations
- 2014Nucleation and growth of polycrystalline SiCcitations
- 2014The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxycitations
- 2014Advances in wide bandgap SiC for optoelectronicscitations
- 2014Real-time measurement of the evolution of growth facets during SiC PVT bulk growth using 3-D X-ray computed tomographycitations
- 2013Tuning the emission colour by manipulating terbium-terbium interactions: Terbium doped aluminum nitride as an example systemcitations
- 2013Photoluminescence topography of fluorescent SiC and its corresponding source crystals
- 2013Morphological and optical stability in growth of fluorescent SiC on low off-axis substratescitations
- 2013Lateral boron distribution in polycrystalline sic source materialscitations
- 2013Step-flow growth of fluorescent 4H-SiC layers on 4 degree off-axis substratescitations
- 2013Influence of the starting materials used in the crystal growth process of CZT for gamma ray radiation applicationscitations
- 2013Fabrication of broadband antireflective sub-wavelength structures on fluorescent SiCcitations
- 2013Microsecond carrier lifetimes in bulk-like 3C-SiC grown by sublimation epitaxy
- 2013Application of 3-D X-ray computed tomography for the in-situ visualization of the SiC crystal growth interface during PVT bulk growthcitations
- 2013Intermetallic compounds dynamic formation during annealing of stacked elemental layers and its influences on the crystallization of Cu 2ZnSnSe4 filmscitations
- 2013Modeling of the mass transport during the homo-epitaxial growth of silicon carbide by fast sublimation epitaxycitations
- 2013Scanning electron microscopical examination of the impact of laser patterning on microscopic inhomogeneities of Cu(In,Ga)(Se,S)2 absorbers produced by rapid thermal processingcitations
- 2013In-situ phase formation study of copper indium diselenide absorber layers from CuIn nanoparticles and evaporated seleniumcitations
- 2013Polycrystalline SiC as source material for the growth of fluorescent SiC layerscitations
- 2013Optimising the parameters for the synthesis of CuIn-nanoparticles by chemical reduction method for chalcopyrite thin film precursorscitations
- 2012Fluorescent SiC as a new material for white LEDscitations
- 2012Sublimation growth of thick freestanding 3C-SiC using CVD-templates on silicon as seedscitations
- 2012Fluorescent SiC for white light-emitting diodes
- 2012Dependence of the seed layer quality on different temperature ramp-up conditions for 3C-SiC hetero-epitaxy on Si (100)citations
- 2012Application of printable ITO/PEDOT nanocomposites as transparent electrodes in optoelectronic devicescitations
- 2012Defect structures at the silicon/3C-SiC interface
- 2012Freestanding 3C-SiC grown by sublimation epitaxy using 3C-SiC templates on siliconcitations
- 2012Broadband and omnidirectional light harvesting enhancement of fluorescent SiCcitations
- 2012Nucleation control of cubic silicon carbide on 6H-substratescitations
- 2012Effects of source material on epitaxial growth of fluorescent SiCcitations
- 2012Preface to selected papers from EMRS 2011 symposium Q: Engineering of wide bandgap semiconductor materials for energy saving
- 2011The influence of gallium on phase transitions during the crystallisation of thin film absorber materials Cu(In,Ga)(S,Se)2 investigated by in-situ X-ray diffractioncitations
- 2011Efficient image segmentation for detection of dislocations in high resolution light microscope images of SiC waferscitations
- 2011Low temperature processing of hybrid nanoparticulate Indium Tin Oxide (ITO) polymer layers and application in large scale lighting devicescitations
- 2011Generation of void-like structures during hot-hydrogen etching of Si substrates for 3C-SiC epitaxycitations
- 2011Low-temperature processing of transparent conductive indium tin oxide nanocomposites using polyvinyl derivativescitations
- 2011Fabrication, charge carrier transport, and application of printable nanocomposites based on indium tin oxide nanoparticles and conducting polymer 3,4-ethylenedioxythiophene/polystyrene sulfonic acidcitations
- 2011Bulk Growth of SiC - Review on Advances of SiC Vapor Growth for Improved Doping and Systematic Study on Dislocation Evolutioncitations
- 2010Observation of lattice plane bending during SiC PVT bulk growth using in-situ high energy x-ray diffractioncitations
- 2010Determination of material inhomogeneities in CuIn(Se,S)2 solar cell materials by high resolution cathodoluminescence topographycitations
- 2010Real-time investigations on the formation of CuIn(S,Se)2 while annealing precursors with varying sulfur content
- 2010Conductivity and adhesion enhancement in low-temperature processed indium tin oxide/polymer nanocompositescitations
- 2010Differential calorimetry study of the initial stage of the sulphurisation process of CuInSe2 solar cell materialscitations
- 2010Fundamental study of the temperature ramp-up influence for 3C-SiC hetero-epitaxy on silicon (100)citations
- 2009Sulfo-selenization of metallic thin films of Cu, In and Cu-Incitations
- 2009On the lattice parameters of silicon carbidecitations
- 2009Silicon carbide growth: C/Si ratio evaluation and modeling
- 2009Aluminum p-type doping of Bulk SiC Single Crystals by Tri-Methyl-Aluminum
- 2009Thermal expansion coefficients of 6H Silicon Carbide
- 2009Germanium incorporation during pvt bulk growth of silicon carbidecitations
- 2009P- and n-type doping in SiC sublimation epitaxy using highly doped substratescitations
- 2009In-situ observation of polytype switches during SiC PVT bulk growth by high energy X-ray diffractioncitations
- 2009Photoluminescence-topography of the p-type doped SiC wafers for determination of doping inhomogeneitycitations
- 2009Real-time Investigations on the Formation of CuIn(S,Se)2 while annealing precursors with varying sulfur contentcitations
- 2009Conductance enhancement mechanisms of printable nanoparticulate Indium Tin Oxide (ITO) layers for application in organic electronic devicescitations
- 2008Conductance enhancement of nano-particulate indium tin oxide layers fabricated by printing technique
- 2008Bulk growth of SiCcitations
- 2008Creation and identification of the two spin states of dicarbon antisite defects in 4H-SiCcitations
- 2008Application of optical absorbance for the investigation of electronic and structural properties of sol-gel processed TiO2 filmscitations
- 2008Determination of dislocation density in MOVPE grown GaN layers using KOH defect etchingcitations
- 2008Bulk growth of SiC - Review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolutioncitations
- 2007Influence of growth temperature on the evolution of dislocations during PVT growth of bulk SiC single crystalscitations
- 2007Numerical modeling and experimental verification of modified-PVT crystal growth of SiCcitations
- 2007Impact of n-type versus p-type doping on mechanical properties and dislocation evolution during SiC crystal growthcitations
- 2007Cathodoluminescence characterization of organic semiconductor materials for light emitting device applicationscitations
- 2007Contactless electrical defect characterization and topography of a-plane grown epitaxial layerscitations
- 2007In-situ x-ray measurements of defect generation during PVT growth of SiCcitations
- 2007Growth and characterization of13C enriched 4H-SiC for fundamental materials studiescitations
- 2007Light extraction from OLEDs for lighting applications through light scatteringcitations
- 2007Defect etching of non-polar and semi-polar faces in SiCcitations
- 2007Electrical, optical and morphological properties of nanoparticle indium-tin-oxide layerscitations
- 2007Erratum to "Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC". [J. Crystal Growth 289 (2006) 520-526] (DOI:10.1016/j.jcrysgro.2005.11.096)citations
- 2007Status of SiC bulk growth processescitations
- 2006Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiCcitations
- 2006In-situ observation of mass transfer in the CF-PVT growth process by X-ray imaging
- 2006Results of SIMS, LTPL and temperature-dependent Hall effect measurements performed on Al-doped α-SiC substrates grown by the M-PVT method
- 2006Silicon carbide growth: C/Si ratio evaluation and modeling
- 2006Growth of silicon carbide bulk crystals with a modified physical vapor transport techniquecitations
- 2006Investigation of the charge carrier concentration in highly aluminum doped SiC using Raman scatteringcitations
- 2006Basal plane dislocation dynamics in highly p-type doped versus highly n-type doped SiC
- 2006Vapor growth of SiC bulk crystals and its challenge of dopingcitations
- 2006Evolution and stability of basal plane dislocations during bulk growth of highly n-type doped versus highly p-type doped 6H-SiCcitations
- 2006Electronic Raman studies of shallow donors in silicon carbide
- 2006Modeling and experimental verification of SiC M-PVT bulk crystal growth
- 2006Anomalous charge carrier transport phenomena in highly aluminum doped SiCcitations
- 2006The influence of microstructure on the magnetic properties of WC/Co hardmetalscitations
- 2006Influence of dislocation content on the quantitative determination of the doping level distribution in n-GaAs using absorption mappingcitations
- 2006Silicon carbide CVD for electronic device applicationscitations
- 2006Dislocation evolution and distribution during physical vapor transport (PVT) growth of bulk 6H-SiC single crystalscitations
- 2005Optical mapping of aluminum doped p-type SiC waferscitations
- 2005Photoluminescence study of In-situ rare earth doped PVT-grown SiC Single crystals
- 2005Modified physical vapor transport growth of SiC - Control of gas phase composition for improved process conditions
- 2005High AI-doping of SiC using a modified PVT (M-PVT) growth set-up
- 2005Development of a KOH defect etching furnace with absolute in-situ temperature measurement capability
- 2005Progress and limits of the numerical simulation of SiC bulk and epitaxy growth processes
- 2005SiC single crystal growth by a modified physical vapor transport techniquecitations
- 2005Additional pipework opens up transistor applications for SiC
- 2005Micro-optical characterization study of highly p-type doped SiC:AI wafers
- 2005Numerical simulation of SIC processes: A characterization tool for the design of epitaxial structures in electronics
- 2005In situ visualization of SiC physical vapor transport crystal growthcitations
- 2004Quantitative determination of the doping level distribution in n-type GaAs using absorption mappingcitations
- 2004Analysis of graphitization during physical vapor transport growth of silicon carbidecitations
- 2004Growth of phosphorous-doped n-type 6H-SiC crystals using a modified PVT technique and phosphine as sourcecitations
- 2004On the origin of the below band-gap absorption bands in n-type (N) 4H- and 6H-SiCcitations
- 2004Structural defects in SiC crystals investigated by high energy x-ray diffraction
- 2004In-situ Er-doping of SiC bulk single crystalscitations
- 2003Determination of Exciton Capture Cross-Sections of Neutral Nitrogen Donor on Cubic and Hexagonal Sites in n-Type (N) 6H-SiCcitations
- 2003Impact of Compensation on Optical Absorption Bands in the Below-Bandgap Region in n-Type (N) 6H-SiCcitations
- 2003Determination of doping levels and their distribution in SiC by optical techniquescitations
- 2003Electrical and Optical Characterization of p-Type Boron-Doped 6H-SiC Bulk Crystalscitations
- 2003Investigation of mass transport during PVT growth of SiC by 13C labeling of source materialcitations
- 2003Investigation of Mass Transport during SiC PVT Growth Using Digital X-Ray Imaging, 13C Labeling of Source Material and Numerical Modeling
- 2002'In situ synthesis' of source material from elemental Si and C during SiC PVT growth process and characterization using digital X-ray imagingcitations
- 2002Aluminum doping of 6H- And 4H-SiC with a modified PVT growth methodcitations
- 2002Analysis of silicon incorporation into VGF-grown GaAscitations
- 2002Optical quantitative determination of doping levels and their distribution in SiCcitations
- 2002Aluminum p-type doping of silicon carbide crystals using a modified physical vapor transport growth methodcitations
- 2002Determination of charge carrier concentration in n- and p-doped SiC based on optical absorption measurementscitations
- 2001Study of boron incorporation during PVT growth of p-type SiC crystalscitations
- 2001Evaluation of n-type doping of 4H-SiC and n-/p-type doping of 6H-SiC using absorption measurementscitations
- 2001Numerical simulation of thermal stress formation during PVT-growth of SiC bulk crystalscitations
- 2001Stability criteria for 4H-SiC bulk growthcitations
- 2001On the preparation of semi-insulating SiC bulk crystals by the PVT techniquecitations
- 2001Absorption mapping of doping level distribution in n-type and p-type 4H-SiC and 6H-SiCcitations
- 2001SiC crystal growth from the vapor and liquid phase
- 2001Impact of SiC source material on temperature field and vapor transport during SiC PVT crystal growth processcitations
- 2001Impact of source material on silicon carbide vapor transport growth processcitations
- 2001Absorption measurements and doping level evaluation in n-type and p-type 4H-SiC and 6H-SiCcitations
- 2001Investigation of a PVT SiC-growth set-up modified by an additional gas flowcitations
- 2000Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVTcitations
- 2000In situ visualization and analysis of silicon carbide physical vapor transport growth using digital X-ray imagingcitations
- 2000Digital X-ray imaging of SiC PVT process: Analysis of crystal growth and powder source degradation
- 2000Growth rate control in SiC-physical vapor transport method through heat transfer modeling and non-stationary process conditions
- 2000Global numerical simulation of heat and mass transfer during SiC bulk crystal PVT growth
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article
Synthesis and Characterization of BaZrS3 Thin Films via Stacked Layer Methodology: A Comparative Study of BaZrS3 on Zirconium Foil and Silicon Carbide Substrates
Abstract
<jats:p>Chalcogenide perovskites are an emerging class of semiconductors particularly interesting for optoelectronic applications due to their high absorption coefficients and direct bandgaps of 1.7–1.9 eV. However, few processing routes have been developed for the synthesis of BaZrS<jats:sub>3</jats:sub> thin films. The advances in the fabrication of BaZrS<jats:sub>3</jats:sub> thin films using zirconium foil as precursor and substrate is a new strategy, which is compared with the results of BaZrS<jats:sub>3</jats:sub> thin films deposited on silicon carbide (SiC) substrate. In this study, a stacked layer methodology, inspired by the fabrication methods used for chalcopyrites and kesterites, is employed. The main objective is to facilitate the conversion of these layers into the desired perovskite structure through annealing. In methodology, we initiated the process by depositing elemental Zr by sputtering on SiC, followed by BaS on top of the Zr through electron beam evaporation and then sulphurized and annealed at high temperature (≈1000–1050 °C) to form BaZrS<jats:sub>3</jats:sub> in an inductively heated physical vapour transport setup in the presence of elemental sulphur. In the parallel approach the methodology remains same, with the sole deviation of zirconium foil, which act as both the substrate and the source. The successful synthesis of BaZrS<jats:sub>3</jats:sub> is confirmed by X‐Ray diffraction (XRD), scanning electron microscopy (SEM), and energy‐dispersive X‐Ray spectroscopy (EDS), while the optical band gap is analyzed by UV‐Vis. The microstructure of the BaZrS<jats:sub>3</jats:sub> films shows the polycrystalline structure and surface roughness.</jats:p>