• Haigh, Sj
• Curry, Rj
• Lagator, Matija
• Moore, Kl
• Li, Kexue
• Adshead, Mason
• Almutawa, Abdulwahab
• Lockyer, Nicholas P.
• Bellew, Allen
• Gourlay, Cm
• Aresta, Gianfranco
• Coke, Maddison
• Cai, Rongsheng
• Cui, Yi

Abstract

The ability to spatially control and modify material properties on the nanoscale, including within nanoscale objects themselves, is a fundamental requirement for the development of advanced nanotechnologies. The development of a platform for nanoscale advanced materials engineering (P-NAME) designed to meet this demand is demonstrated. P-NAME delivers a high-resolution focused ion beam system with a coincident scanning electron microscope and secondary electron detection of single-ion implantation events. The isotopic mass-resolution capability of the P-NAME system for a wide range of ion species is demonstrated, offering access to the implantation of isotopes that are vital for nanomaterials engineering and nanofunctionalization. The performance of the isotopic mass selection is independently validated using secondary ion mass spectrometry (SIMS) for a number of species implanted into intrinsic silicon. The SIMS results are shown to be in good agreement with dynamic ion implantation simulations, demonstrating the validity of this simulation approach. The wider performance capabilities of P-NAME, including sub-10 nm ion beam imaging resolution and the ability to perform direct-write ion beam doping and nanoscale ion lithography, are also demonstrated.

Topics

• impedance spectroscopy
• simulation
• focused ion beam
• Silicon
• spectrometry
• lithography
• selective ion monitoring
• secondary ion mass spectrometry