| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Curry, Rj
University of Manchester
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2023A high-resolution versatile focused ion implantation platform for nanoscale engineeringcitations
- 2022High efficiency semitransparent perovskite solar cells containing 2D nanopore arrays deposited in a single stepcitations
- 2021Exciton effects in perovskite nanocrystalscitations
- 2019Optical and electrical properties of alkaline-doped and As-alloyed amorphous selenium filmscitations
- 2019X-ray induced Sm-ion valence conversion in Sm-ion implanted fluoroaluminate glasses towards high-dose radiation measurementcitations
- 2014Optical and electronic properties of bismuth-implanted glassescitations
- 2014n-type chalcogenides by ion implantationcitations
- 2014n-type chalcogenides by ion implantation.citations
- 2013On the analogy between photoluminescence and carrier-type reversal in Bi- and Pb-doped glassescitations
- 2011Determination of the oxidation state and coordination of a vanadium doped chalcogenide glasscitations
- 2007Concentration dependence of the fluorescence decay profile in transition metal doped chalcogenide glasscitations
- 2005A study of environmental effects on the attenuation of chalcogenide optical fibrecitations
Places of action
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article
A high-resolution versatile focused ion implantation platform for nanoscale engineering
Abstract
The ability to spatially control and modify material properties on the nanoscale, including within nanoscale objects themselves, is a fundamental requirement for the development of advanced nanotechnologies. The development of a platform for nanoscale advanced materials engineering (P-NAME) designed to meet this demand is demonstrated. P-NAME delivers a high-resolution focused ion beam system with a coincident scanning electron microscope and secondary electron detection of single-ion implantation events. The isotopic mass-resolution capability of the P-NAME system for a wide range of ion species is demonstrated, offering access to the implantation of isotopes that are vital for nanomaterials engineering and nanofunctionalization. The performance of the isotopic mass selection is independently validated using secondary ion mass spectrometry (SIMS) for a number of species implanted into intrinsic silicon. The SIMS results are shown to be in good agreement with dynamic ion implantation simulations, demonstrating the validity of this simulation approach. The wider performance capabilities of P-NAME, including sub-10 nm ion beam imaging resolution and the ability to perform direct-write ion beam doping and nanoscale ion lithography, are also demonstrated.