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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Graham, Samuel
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2024MAX Phase Ti<sub>2</sub>AlN for HfO<sub>2</sub> Memristors with Ultra‐Low Reset Current Density and Large On/Off Ratiocitations
- 2021Geomechanical characterisation of organic-rich calcareous shale using AFM and nanoindentationcitations
- 2020Diamond Seed Size and the Impact on Chemical Vapor Deposition Diamond Thin Film Propertiescitations
- 2019The Effects of AlN and Copper Back Side Deposition on the Performance of Etched Back GaN/Si HEMTscitations
- 2018Transient Liquid Phase Bonding of AlN to AlSiC for Durable Power Electronic Packagescitations
- 2016Spectroscopy and control of near-surface defects in conductive thin film ZnOcitations
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article
Transient Liquid Phase Bonding of AlN to AlSiC for Durable Power Electronic Packages
Abstract
Conventional power electronic modules employ a direct bonded copper (DBC) substrate and multiple interface layers to dissipate heat. However, reliability issues arise due to the coefficient of thermal expansion (CTE) mismatch that exists between the metal, ceramic, and semiconductor materials in the conventional module. Significant performance enhancement can be achieved by eliminating the DBC and developing an integrated substrate/cold plate with a low CTE mismatch throughout the package. To address this need, we have demonstrated the ability to directly bond the aluminum nitride (AlN) substrate to an AlSiC heat sink through transient liquid phase bonding using a Cu-Al binary system. Fabricated samples are found to have good interfacial adhesion. The novel bond material exhibits properties analogous to AlSiC and is analyzed for thermal, mechanical, and metallographic properties. The novel structure demonstrated in this work will enable smaller, lighter, and more reliable power modules, when compared to traditional configurations.