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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kleider, Jean-Paul
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (28/28 displayed)
- 2024Surface photovoltage study of perovskite materials and structures for solar cell applications
- 2024Three Terminal Organic-Silicon Tandem Models
- 2023Elucidating Interfacial Limitations Induced by Tin Oxide Electron Selective Layer Grown by Atomic Layer Deposition in N−I−P Perovskite-Based Solar Cellscitations
- 2023The modulated photoluminescence technique versus temperature: opportunities for better determination of trap parameters
- 2022Characterization of semiconductors from photoconductivity techniques: uniform and polychromatic illumination
- 2022Surface photovoltage study of metal halide perovskites deposited directly on crystalline silicon
- 2022Surface photovoltage characterisation of metal halide perovskite on crystalline silicon using Kelvin probe force microscopy and metal-insulator-semiconductor configurationcitations
- 2021Evolution of the surface passivation mechanism during the fabrication of ex-situ doped poly-Si(B)/SiOx passivating contacts for high-efficiency c-Si solar cellscitations
- 2021Evolution of the surface passivation mechanism during the fabrication of ex-situ doped poly-Si(B)/SiOx passivating contacts for high-efficiency c-Si solar cellscitations
- 2021Carrier gradients and the role of charge selective contacts in lateral heterojunction all back contact perovskite solar cellscitations
- 2021Space charge capacitance study of GaP/Si multilayer structures grown by plasma depositioncitations
- 2021Surface photovoltage characterisation of metal halide perovskite on c-SI using kelvin probe force microscopy and metal-insulator-semiconductor configuration
- 2019Heteroepitaxial growth of silicon on GaAs via low-temperature plasma-enhanced chemical vapor depositioncitations
- 2019Building blocks development for defect-free growth of GaAs on silicon for tandem solar cells
- 2019SiOxNy:B layers for ex-situ doping of hole-selective poly silicon contacts: A passivation studycitations
- 2018Conductivity and Surface Passivation Properties of Boron‐Doped Poly‐Silicon Passivated Contacts for c‐Si Solar Cellscitations
- 2018Heteroepitaxial growth of Silicon on GaAs via low temperature plasma-enhanced chemical vapor deposition
- 2018Improvement of the conductivity and surface passivation properties of boron-doped poly-silicon on oxidecitations
- 2017Coupling Optical and Electrical Modelling for the study of a-Si:H-based nanowire Array Solar Cellscitations
- 2017Coupling Optical and Electrical Modelling for the study of a-Si:H-based nanowire Array Solar Cellscitations
- 2017Influence of PE-ALD of GaP on the Silicon Wafers Qualitycitations
- 2015Revisiting the theory and usage of junction capacitance: Application to high efficiency amorphous/crystalline silicon heterojunction solar cellscitations
- 2013n-type a-Si:H layers applied to the back side of heterojunction solar cells: Experimental and simulation analysiscitations
- 2013n-type a-Si:H layers applied to the back side of heterojunction solar cells: Experimental and simulation analysiscitations
- 2012Amorphous silicon diamond based heterojunctions with high rectification ratiocitations
- 2012Nanowire solar cells using hydrogenated amorphous silicon: a modeling studycitations
- 2009An intelligent measurement system for diagnosing of semi-insulating materials by photoinduced transient spectroscopy
- 2007Scaling analysis of field-enhanced bandtail hopping transport in amorphous carbon nitridecitations
Places of action
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booksection
Characterization of semiconductors from photoconductivity techniques: uniform and polychromatic illumination
Abstract
International audience ; In this chapter we present optoelectronic characterization techniques that can be applied to coplanar samples as well as solar devices. Using the photoconductive properties of the semiconductor, the carrier generation is achieved with several photon energies lower than the band gap width of the material under investigation. These techniques are the constant photocurrent method (CPM) and the Fourier transform photocurrent spectroscopy (FTPS). The CPM was developed to gain information on the optical absorption of a semiconductor in an energy range where the sensitivity of the classical UVvisible spectroscopy is too low for this technique to be applicable. First, we present the theoretical and experimental bases of the CPM. Then, we show that the optical absorption is linked to the density of states (DOS) in the gap of the material and we present some of the models that were used to extract this DOS from the CPM results. Finally, we underline some of the limits of the CPM technique. One the main drawback of the CPM is the time needed for the acquisition of the variations of the absorption coefficient as function of the photon energy. The FTPS was imagined to overcome this drawback and, indeed, the same spectrum can be obtained within a few seconds. We present the theoretical and experimental bases of the FTPS and show that this technique can be used as a systematic mean of characterization of materials and devices replacing advantageously the CPM. To illustrate the powerfulness of the FPTS we give experimental results obtained on a solar device and compare them to the spectrum obtained on the device absorber. We conclude by presenting some results obtained by FTPS on perovskites, a very promising material for the future development of solar energy.