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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Van Sark, Wilfried G. J. H. M.
Utrecht University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2019Proof of Concept for a Novel and Smart Shade Resilient Photovoltaic Modulecitations
- 2017Heterojunction Silicon Solar Cellscitations
- 2016A cost roadmap for silicon heterojunction solar cellscitations
- 2015Life-cycle greenhouse gas emissions and energy payback time of current and prospective silicon heterojunction solar cell designscitations
- 2014Long-term optical stability of fluorescent solar concentrator platescitations
- 2010Towards upconversion for amorphous silicon solar cellscitations
- 2010Using amorphous silicon solar cells to boost the viability of luminescent solar concentratorscitations
Places of action
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booksection
Heterojunction Silicon Solar Cells
Abstract
Heterojunctions can be found in a wide variety of solar cells. This chapter presents the basics of heterojunctions and draws on the basics of homojunctions. It reviews the development of the silicon heterojunction cell (SHJ). Proper analysis of band diagrams thus is necessary to understand device performance. The silicon heterojunction solar cell is based on a device structure that combines thin film and bulk silicon technology. Of particular interest is the heterojunction cell with an intrinsic thin layer (HIT) with which Sanyo had achieved a very high efficiency of 23% in 2009, and of 25.6% efficiency most recently. This strongly challenges the standard high efficiency c‐Si homojunction cell. Surface passivation of the c‐Si wafer is a key requirement to optimize the performance of SHJ solar cells. Generally, surface passivation is ascribed to two different phenomena, namely, chemical passivation and field effect passivation.