693.932 PEOPLE
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| Naji, M. |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Casati, R. |
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| Kočí, Jan | Prague |
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| Azevedo, Nuno Monteiro |
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Suvorova, Alexandra
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Topics
Publications (17/17 displayed)
- 2018Nanogeochemistry of hydrothermal magnetitecitations
- 2018Nanoscale partitioning of Ru, Ir, and Pt in base-metal sulfides from the Caridad chromite deposit, Cubacitations
- 2016Thermally stable coexistence of liquid and solid phases in gallium nanoparticlescitations
- 2015Structural transformation of implanted diamond layers during high temperature annealingcitations
- 2014Effect of Interface energy and electron transfer on shape, plasmon resonance and SERS activity of supported surfactant-free gold nanoparticlescitations
- 2014Transformation of YSZ under high fluence argon ion implantationcitations
- 2013Conventional and analytical electron microscopy study of phase transformation in implanted diamond layers
- 2011Effects of ad-atom diffusivity throughout Sb-mediated formation of Ge/Si nanoislands
- 2008Structural and optical properties of ZnO thin films by rf magnetron sputtering with rapid thermal annealingcitations
- 2007Application of two-electron spectroscopy in reflection for studying electronic structure of surfaces and thin filmscitations
- 2007Multifunctional Nanocrystalline Thin Films of Er2O3: Interplay between Nucleation Kinetics and Film Characteristicscitations
- 2007Er2O3 as a high-K dielectric candidatecitations
- 2006Magnesium oxide as a candidate high-k gate dielectriccitations
- 2005ZrO2 film interfaces with Si and SiO2citations
- 2003Study of interface formation of (Ba,Sr)TiO3 thin films grown by rf sputter deposition on bare Si and thermal SiO2/Si substrates
- 2002Study of interface formation of (Ba,Sr)TiO3 thin films grown by rf sputter deposition on bare Si and thermal SiO2/Si substrates
- 2001Anisotropy of the spatial distribution of In(Ga)As quantum dots in In(Ga)As-GaAs multilayer heterostructures studied by X-ray and synchrotron diffraction and transmission electron microscopycitations
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document
Conventional and analytical electron microscopy study of phase transformation in implanted diamond layers
Abstract
<p>Graphitization of ion-beam induced amorphous layers in diamond has attracted significant interest due to ability to fabricate device structures containing two structural forms of carbon. The graphitic layers can be chemically etched to form free-standing diamond films. In the present work the graphitization process was studied using conventional and analytical transmission electron microscopy (TEM). It was found that annealing at 550 °C results in a partial graphitization of the implanted volume with graphitic phase in the middle of the amorphous layer. Annealing at 1400 °C resulted in complete graphitization of the amorphous layers.</p>