| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Stevenson, Jeffry W.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (3/3 displayed)
- 2010Advanced Ceramic Interconnect Material for Solid Oxide Fuel Cells: Electrical and Thermal Properties of Calcium- and Nickel-Doped Yttrium Chromitescitations
- 2010Improvement of Sintering, Thermal Behavior, and Electrical Properties of Calcium- and Transition Metal-Doped Yttrium Chromitecitations
- 2006High Temperature Corrosion Behavior of Oxidation Resistant Alloys under SOFC Interconnect Dual Exposures
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document
High Temperature Corrosion Behavior of Oxidation Resistant Alloys under SOFC Interconnect Dual Exposures
Abstract
The steady reduction in SOFC operating temperatures has led to increased interest in using metals and alloys to construct the stack interconnects that are exposed simultaneously to a fuel at the anode-side and air at the cathode-side during SOFC operation. Previous work has found that the high temperature oxidation and corrosion behavior of alloys under the dual exposure conditions can be significantly different from that in a single atmosphere exposure. To fully understand the anomalous oxidation and corrosion behavior under the interconnect dual exposure conditions, a number of metals and alloys were investigated under a variety of conditions, including both hydrogen and hydrocarbon fuels. This paper will present details of this work and discuss our current understanding on the anomalous oxidation behavior of metals and alloys observed under the interconnect dual exposure conditions.