People | Locations | Statistics |
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Ferrari, A. |
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Schimpf, Christian |
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Dunser, M. |
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Thomas, Eric |
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Gecse, Zoltan |
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Tsrunchev, Peter |
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Della Ricca, Giuseppe |
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Cios, Grzegorz |
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Hohlmann, Marcus |
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Dudarev, A. |
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Mascagna, V. |
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Santimaria, Marco |
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Poudyal, Nabin |
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Piozzi, Antonella |
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Mørtsell, Eva Anne |
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Jin, S. |
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Noel, Cédric |
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Fino, Paolo |
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Mailley, Pascal |
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Meyer, Ernst |
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Zhang, Qi |
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Pfattner, Raphael | Brussels |
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Kooi, Bart J. |
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Babuji, Adara |
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Pauporte, Thierry |
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Maccato, C.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2022A versatile Fe(II) diketonate diamine adduct: Preparation, characterization and validation in the chemical vapor deposition of iron oxide nanomaterialscitations
- 2021A Cu(ii)-MOF based on a propargyl carbamate-functionalized isophthalate ligandcitations
- 2021Facile preparation of a cobalt diamine diketonate adduct as a potential vapor phase precursor for Co3O4filmscitations
- 2020Quasi-1D MnO2 nanocomposites as gas sensors for hazardous chemicalscitations
- 2016Interfacial insight in multi-junction metal oxide photoanodes for water splitting applicationscitations
- 2015An old workhorse for new applications: Fe(dpm)(3) as a precursor for low-temperature PECVD of iron(III) oxidecitations
- 2014Rational synthesis of F-doped iron oxides on Al_{2}O_{3}(0001)$ single crystalscitations
- 2013Columnar Fe2O3 arrays via plasma-enhanced growth: Interplay of fluorine substitution and photoelectrochemical propertiescitations
- 2013Fluorine doped Fe_{2}O_{3}$ nanostructures by a one-pot plasma-assisted strategycitations
- 2013Fluorine doped Fe2O3 nanostructures by a one-pot plasma-assisted strategycitations
- 2011Surface-Driven Porphyrin Self-Assembly on Pre-Activated Si Substratescitations
Places of action
article
Interfacial insight in multi-junction metal oxide photoanodes for water splitting applications
Abstract
S.415-427 ; Photoelectrochemical (PEC) properties of nanostructured hematite (Fe2O3) thin films prepared using plasma-enhanced chemical vapor deposition (PE-CVD) were investigated against the influence of processing parameters and post-synthesis heat-treatment procedures. Annealing at high temperatures (>500 °C) was found to substantially affect the micro-structure (grain growth and densification) and electronic (interdiffusion at the film/substrate interface) concomitantly manifested in an enhancement in the PEC behavior. The Sn impurity level in hematite films was found to increase with the annealing temperature with highest values achieved in samples heat-treated at 750 °C, due to the interdiffusion and substitution of Sn(IV) species at Fe(III) sites. Sn:Fe2O3 films exhibited significantly high photocurrent density of 1.33 mA cm−2 at the water oxidation level of 1.23 V vs. RHE. The diffusion of Sn ions into iron oxide lattice altered the electronic properties of hematite films due to electron-donor behavior of the dopants that was verified by X-ray photoelectron spectroscopy and secondary ion mass spectroscopy (SIMS) analyses. Deposition of a thin overlayer of TiO2 (10 nm) on hematite films by atomic layer deposition (ALD) was found to further improve the photocurrent density to 1.8 mA cm−2 at 1.23 V vs. RHE. Ab-initio calculations on the effect of substitutional Sn(IV) dopants in the Fe2O3 lattice on the electronic structure and the band alignment between hematite and the TiO2 over layer revealed that Sn-dopants led to the generation of localized Fe(II) centers augmenting the n-type behavior of hematite. No effect of the Sn-doping on the electrostatic potential was found on a macroscopic scale. However, the charge transfer from the Sn-doping to the Fe(II) centers would cause high electric fields on the nanometer scale and might hence play an important role in the efficient separation of electron and holes. The simulations showed that the hematite band edges are enclosed by the TiO2 band edges and ...