People | Locations | Statistics |
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Ferrari, A. |
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Schimpf, Christian |
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Dunser, M. |
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Thomas, Eric |
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Gecse, Zoltan |
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Tsrunchev, Peter |
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Della Ricca, Giuseppe |
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Cios, Grzegorz |
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Hohlmann, Marcus |
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Dudarev, A. |
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Mascagna, V. |
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Santimaria, Marco |
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Poudyal, Nabin |
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Piozzi, Antonella |
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Mørtsell, Eva Anne |
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Jin, S. |
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Noel, Cédric |
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Fino, Paolo |
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Mailley, Pascal |
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Meyer, Ernst |
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Zhang, Qi |
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Pfattner, Raphael | Brussels |
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Kooi, Bart J. |
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Babuji, Adara |
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Pauporte, Thierry |
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Mraz, S.
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Topics
Publications (6/6 displayed)
- 2021On the fracture behavior of Cr 2 AlC coatingscitations
- 2017Unprecedented Al supersaturation in single-phase rock salt structure VAlN films by Al+ subplantationcitations
- 2017Extended metastable Al solubility in cubic VAlN by metal-ion bombardment during pulsed magnetron sputtering: film stress vs subplantationcitations
- 2016Unintentional carbide formation evidenced during high-vacuum magnetron sputtering of transition metal nitride thin filmscitations
- 2016Venting temperature determines surface chemistry of magnetron sputtered TiN filmscitations
- 2010On the phase formation of sputtered hafnium oxide and oxynitride filmscitations
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article
Extended metastable Al solubility in cubic VAlN by metal-ion bombardment during pulsed magnetron sputtering: film stress vs subplantation
Abstract
Dynamic ion-recoil mixing of near-film-surface atomic layers is commonly used to increase the metastable solubility limit x(max) in otherwise immiscible thin film systems during physical vapor deposition. Recently, Al subplantation achieved by irradiating the film growth surface with Al+ metal-ion flux was shown to result in an unprecedented x(max) for VAlN, far above values obtained with gas ion irradiation. However, it is reasonable to assume that ion irradiation necessary for subplantation also leads to a compressive stress sigma buildup. In order to separate the effects of Al+ bombardment on sigma and x(max), and realize low-stress high-x(max) nitride alloys, we grow metastable cubic V1-xAlxN (0.17 amp;lt;= x amp;lt;= 0.74) films using reactive magnetron sputtering under different ion irradiation conditions. Al and V targets are operated in Ar/N-2 discharges employing (i) conventional DC (Ar+, N-2(+)), (ii) hybrid High-power pulsed magnetron sputtering (HIPIMS)/DC processing with one type of metal ion present (Al+ or V+/V2+), and (iii) HIPIMS with concurrent Al+ and V+/V2+ fluxes. Comparison to the ab initio calculated Al solubility limit reveals that x(max) = 0.55 achieved with V+/V2+ irradiation is entirely accountable for by stress. In contrast, Al+ fluxes provide a substantial increase in x(max) to 0.63, which is 12% higher than that expected based on the stress-induced increase in metastable solubility. Correlative stress and atom probe tomography data confirm that the metastable Al solubility enhancement is enabled by Al+ subplantation. The here proposed processing strategy allows for growth of single-phase cubic nitride alloys with significantly increased Al concentrations embodying tremendous promise for substantial improvements in high temperature oxidation resistance and mitigates the risk of stress-induced adhesive or cohesive coating failure. Published by AIP Publishing. ; Funding Agencies|German Research Foundation (DFG) [SFB-TR 87]; VINN Excellence Center Functional Nanoscale Materials (FunMat) [2005-02666]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [SFO-Mat-LiU 2009-00971]; Knut and Alice Wallenberg Foundation [2011.0143]; Aforsk Foundation [16-359]; JARA-HPC from RWTH Aachen University [JARA0151]