People | Locations | Statistics |
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Ferrari, A. |
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Schimpf, Christian |
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Dunser, M. |
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Thomas, Eric |
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Gecse, Zoltan |
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Tsrunchev, Peter |
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Della Ricca, Giuseppe |
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Cios, Grzegorz |
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Hohlmann, Marcus |
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Dudarev, A. |
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Mascagna, V. |
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Santimaria, Marco |
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Poudyal, Nabin |
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Piozzi, Antonella |
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Mørtsell, Eva Anne |
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Jin, S. |
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Noel, Cédric |
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Fino, Paolo |
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Mailley, Pascal |
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Meyer, Ernst |
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Zhang, Qi |
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Pfattner, Raphael | Brussels |
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Kooi, Bart J. |
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Babuji, Adara |
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Pauporte, Thierry |
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Lemberger, M.
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Topics
Publications (9/9 displayed)
- 2015Improved electrical behavior of ZrO2-based MIM structures by optimizing the O3 oxidation pulse timecitations
- 2013Structural properties of as deposited and annealed ZrO2 influenced by atomic layer deposition, substrate, and dopingcitations
- 2013Detailed leakage current analysis of metal-insulator-metal capacitors with ZrO2, ZrO2/SiO2/ZrO2, and ZrO2/Al2O3/ZrO2 as dielectric and TiN electrodescitations
- 2010Chemische Gasphasenabscheidung von Metallsilicatschichten aus Einquellen-Ausgangsstoffen für Anwendungen in der Mikroelektronik ; Chemical vapor deposition of metal silicates using single-source precursors for microelectronic applications
- 2009Influence of N2 and NH3 annealing on the nitrogen incorporation and k-value of thin ZrO2 layerscitations
- 2007MOCVD of tantalum nitride thin films from TBTEMT single source precursor as metal electrodes in CMOS applicationscitations
- 2007MOCVD of hafnium silicate films obtained from a single-source precursor on silicon and germanium for gate-dielectric applicationscitations
- 2004Different current conduction mechanisms through thin high-k Hf(x)Ti(y)Si(z)O films due to the varying Hf to Ti ratiocitations
- 2002New single-source precursors for the MOCVD of high-kappa dielectric zirconium silicates to replace SiO2 in semiconducting devicescitations
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