People | Locations | Statistics |
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Ferrari, A. |
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Schimpf, Christian |
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Dunser, M. |
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Thomas, Eric |
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Gecse, Zoltan |
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Tsrunchev, Peter |
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Della Ricca, Giuseppe |
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Cios, Grzegorz |
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Hohlmann, Marcus |
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Dudarev, A. |
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Mascagna, V. |
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Santimaria, Marco |
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Poudyal, Nabin |
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Piozzi, Antonella |
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Mørtsell, Eva Anne |
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Jin, S. |
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Noel, Cédric |
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Fino, Paolo |
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Mailley, Pascal |
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Meyer, Ernst |
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Zhang, Qi |
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Pfattner, Raphael | Brussels |
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Kooi, Bart J. |
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Babuji, Adara |
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Pauporte, Thierry |
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Erbe, A.
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Topics
Publications (10/10 displayed)
- 2022Engineering gold-platinum core-shell nanoparticles by self-limitation in solutioncitations
- 2022Differences in perchlorate adsorption to azobenzene monolayers on gold formed from thioacetate and thiol precursorscitations
- 2022Terahertz control of photoluminescence emission in few-layer InSecitations
- 2020Electrochemical contrast switching between black and white appearance of gelatin-covered zinc
- 2020Transition Metal-Carbon Bond Enthalpies as Descriptor for the Electrochemical Stability of Transition Metal Carbides in Electrocatalytic Applicationscitations
- 2019Pretreatment with a β-Cyclodextrin-Corrosion Inhibitor Complex Stops an Initiated Corrosion Process on Zinccitations
- 2019Carbon-Sulfur Bond Cleavage During Adsorption of Octadecane Thiol to Copper in Ethanolcitations
- 2018Gradient in defect density of ZnO nanorods grown by cathodic delamination, a corrosion process, leads to end-specific luminescencecitations
- 2016Electrical characterization of two-dimensional materials and their heterostructurescitations
- 2013Electro-codeposition of Modified Silica Colloids and Coppercitations
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article
Terahertz control of photoluminescence emission in few-layer InSe
Abstract
A promising route for the development of opto-electronic technology is to use terahertz radiation to modulate the optical properties of semiconductors. Here, we demonstrate the dynamical control of photoluminescence (PL) emission in few-layer InSe using picosecond terahertz pulses. We observe a strong PL quenching (up to 50%) after the arrival of the terahertz pulse followed by a reversible recovery of the emission on the timescale of 50 ps at T = 10 K. Microscopic calculations reveal that the origin of the photoluminescence quenching is the terahertz absorption by photo-excited carriers: this leads to a heating of the carriers and a broadening of their distribution, which reduces the probability of bimolecular electron-hole recombination and, therefore, the luminescence. By numerically evaluating the Boltzmann equation, we are able to clarify the individual roles of optical and acoustic phonons in the subsequent cooling process. The same PL quenching mechanism is expected in other van der Waals semiconductors, and the effect will be particularly strong for materials with low carrier masses and long carrier relaxation time, which is the case for InSe. This work gives a solid background for the development of opto-electronic applications based on InSe, such as THz detectors and optical modulators.