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Grohsjean, Alexander |
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Falmagne, G. |
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Erice, C. |
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Hernandez, A. M. Vargas |
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Leiton, A. G. Stahl |
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Lipka, K. |
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Pantaleo, F. |
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Torterotot, L. |
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Savina, M. |
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Cerri, O. |
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Jung, A. W. |
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Chiarito, B. |
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Sahin, M. O. |
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Strong, G. |
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Saradhy, R. |
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Joshi, B. M. |
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Kaynak, B. |
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Barrera, C. Baldenegro |
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Longo, Egidio |
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Kolberg, Ted |
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Ferguson, Thomas |
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Leverington, Blake |
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Haase, Fabian |
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Heath, Helen F. |
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Kokkas, Panagiotis |
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Ikonic, Z.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2022Enhanced GeSn Microdisk Lasers Directly Released on Si
- 2022Improved Thermoelectric Properties of SrTiO3 via (La, Dy and N) Co-Doping: DFT Approach
- 2021Epitaxial GeSn/Ge Vertical Nanowires for p-Type Field-Effect Transistors with Enhanced Performance
- 2019The study of structural, morphological and optical properties of (Al, Ga)-doped ZnO: DFT and experimental approaches
- 2019Ultra-Low Threshold CW Lasing in Tensile Strained GeSn Microdisk Cavities
- 2018Investigation of carrier confinement in direct bandgap GeSn/SiGeSn 2D and 0D heterostructures
- 2017Correlation of bandgap reduction with inversion response in (Si)GeSn/high-k/metal stacks.citations
- 2015Direct Bandgap Group IV Epitaxy on Si for Laser Applicationscitations
- 2012Density matrix modelling of Ge/GeSi quantum cascade terahertz lasers
- 2012Optical absorption in highly strained Ge/SiGe quantum wells: The role of Γ→Δ scatteringcitations
- 2009Low electric field silicon-based THz quantum cascade laser employing L-valley intersubband transitions
- 2008Crystal orientation and waveguide geometry effects in n-type Si/SiGe quantum cascade lasers
- 2008On the coherence/incoherence of electron transport in semiconductor heterostructure optoelectronic devicescitations
- 2007Band structure calculations of Si–Ge–Sn alloys: achieving direct band gap materialscitations
- 2007Interwell relaxation times in p-Si/SiGe asymmetric quantum well structures: the role of interface roughnesscitations
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