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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Veřtát, Petr
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Publications (4/4 displayed)
- 2024Constant plane shift model: Structure analysis of martensitic phases in Ni50Mn27Ga22Fe1 beyond non-modulated building blockscitations
- 2021Influence of Ceramic Particles Character on Resulted Properties of Zinc-Hydroxyapatite/Monetite Compositescitations
- 2021Effect of electron localization in theoretical design of Ni-Mn-Ga based magnetic shape memory alloyscitations
- 2020Low temperature a/b nanotwins in Ni50Mn25+xGa25x Heusler alloyscitations
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article
Low temperature a/b nanotwins in Ni50Mn25+xGa25x Heusler alloys
Abstract
We have found low temperature a/b nanotwins having (110) twinning plane in a five-layered modulated martensite phase of Ni50Mn25+xGa25x (at. %) Heusler alloys and identified the particular region in phase diagram where the nanotwinning occurs. Evolution of the structure with decreasing temperature was studied by X-ray diffraction using single crystals exhibiting magnetic shape memory effect. The merging of (400) and (040) lines upon cooling for 2.6 < x < 3.5 indicated a/b nanotwinning originating from the refinement of initially coarse a/b twins. Refinement of the twins with decreasing temperature was observed directly using scanning electron microscopy. The prerequisite for nanotwinning is an extremely low twin boundary energy, which we estimated using first-principles calculations to be 0.16 meV/2. As the nanotwinning distorts the relation between the crystal lattice and the X-ray diffraction pattern, it should be taken into consideration in structural studies of Ni-Mn-Ga Heusler alloys.