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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Bijkerk, Frederik
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Topics
Publications (10/10 displayed)
- 2017In-vacuo growth studies and thermal oxidation of ZrO2 thin films
- 2017Tuning of large piezoelectric response in nanosheet-buffered lead zirconate titanate films on glass substratescitations
- 2017Detection of defect populations in superconductor boron subphosphide B12P2 through X-ray absorption spectroscopycitations
- 2016In-vacuo growth studies of ZrO2 thin films
- 2016Structure of high-reflectance La/B-based multilayer mirrors with partial La nitridationcitations
- 2016Growth kinetics of Ru on Si, SiN and SiO2 studied by in-vacuo low energy ion scattering (LEIS)
- 2016Exploiting the P L2,3 absorption edge for optics: spectroscopic and structural characterization of cubic boron phosphide thin filmscitations
- 2013Engineering optical constants for broadband single layer anti-reflection coatings
- 2012Chemical interactions at the interfaces of Mo/B4C/Si/B4C multilayers upon low-temperature annealing
- 2012Multilayer development for the generation beyond EUV: 6.x nm
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document
In-vacuo growth studies and thermal oxidation of ZrO2 thin films
Abstract
ZrO2 thin films might be used as capping layers for protecting extreme ultraviolet (EUV) optics against chemical degradation processes. These coatings should form a homogeneous closed layer that does not degrade the underneath layers, while the thickness is restricted to a few nanometres to keep good reflection of the mirror. The initial growth of ZrO2 films by reactive magnetron sputtering on top of amorphous Si, SiNx and SiO2 was monitored by in vacuo low-energy ion scattering (LEIS). This technique is selectively sensitive to the outermost atomic layer, such that it can be determined for which deposited thickness a closed layer was formed and how deposition parameters and surface passivation affect the sharpness of the ZrO2/Si interface. In-vacuo X-ray photoelectron spectroscopy (XPS) was used to study the oxidation state of both ZrO2 and underlying Si. Additionally, XPS was used ex-situ for probing oxygen diffusion through the capping layer after thermal oxidation in ambient.