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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Bijkerk, Frederik
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2017In-vacuo growth studies and thermal oxidation of ZrO2 thin films
- 2017Tuning of large piezoelectric response in nanosheet-buffered lead zirconate titanate films on glass substratescitations
- 2017Detection of defect populations in superconductor boron subphosphide B12P2 through X-ray absorption spectroscopycitations
- 2016In-vacuo growth studies of ZrO2 thin films
- 2016Structure of high-reflectance La/B-based multilayer mirrors with partial La nitridationcitations
- 2016Growth kinetics of Ru on Si, SiN and SiO2 studied by in-vacuo low energy ion scattering (LEIS)
- 2016Exploiting the P L2,3 absorption edge for optics: spectroscopic and structural characterization of cubic boron phosphide thin filmscitations
- 2013Engineering optical constants for broadband single layer anti-reflection coatings
- 2012Chemical interactions at the interfaces of Mo/B4C/Si/B4C multilayers upon low-temperature annealing
- 2012Multilayer development for the generation beyond EUV: 6.x nm
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document
Chemical interactions at the interfaces of Mo/B4C/Si/B4C multilayers upon low-temperature annealing
Abstract
Interactions at interfaces in thin films and multilayers play an important role for present day nano-scaled devices. For example, reducing thermally induced interdiffusion between Mo and Si layers is a key challenge in developing Mo/Si multilayers as reflective coatings for projection lithography and free electron lasers. The introduction of thin B4C barrier layers, intended to reduce thermal damage, results in complex behavior under thermal loads. Using in-situ grazing incidence X-ray reflection measurements during sequential annealing, we resolve picometer changes in the multilayer structure, and link these changes to interactions of Mo and Si with the B4C layers, combined with molybdenum silicide formation with reduced formation rates.