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Reitmeier, Zj
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Publications (4/4 displayed)
- 2005Structural TEM study of nonpolar a-plane gallium nitride grown on (1120) 4H-SiC by organometallic vapor phase epitaxycitations
- 2005Transmission electron microscopy study of nonpolar a-plane GaN grown by pendeo-epitaxy on (11(2)under-bar0) 4H-SiC
- 2004Characterization and comparison of 4H-SiC(11(2)over-bar0) and 4H-SiC(0001) 8 degrees off-axis substrates and homoepitaxial films
- 2003Growth and characterization of epitaxial GaN thin films on 4H-SiC (11.0) substrates
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document
Growth and characterization of epitaxial GaN thin films on 4H-SiC (11.0) substrates
Abstract
<p>GaN thin films were grown via metalorganic vapor phase epitaxy on a-plane 4H-SiC substrates on which had been deposited an AIN buffer layer. Atomic force microscopy images revealed that the microstructure of the AIN buffer layer and the subsequently deposited GaN had a highly oriented growth structure where parallel growth features propagated in the [1-1.0] direction. Scanning electron microscopy showed that the interfaces between the substrate, buffer layer, and epi-layer were continuous. Cracking was observed in GaN films having a thickness greater than 800 nm. Plan-view transmission electron microscopy analysis revealed stacking faults and threading dislocations with densities of similar to 1.6 x 10(6) cm(-1) and similar to3.3 x 10(10)cm(-1), respectively. X-ray diffraction confirmed that the GaN was deposited epitaxially in the same orientation as the substrate. The average on- and off-axis x-ray full-width half-maxima of the (11.0) and the (10.0) reflections were 948 arcsec and 5448 arcsec, respectively.</p>