| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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George, Antony
Friedrich Schiller University Jena
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (19/19 displayed)
- 2023Structural and electronic properties of MoS2 and MoSe2 monolayers grown by chemical vapor deposition on Au(111)†citations
- 2023Atomic-scale characterization of contact interfaces between thermally self-assembled Au islands and few-layer MoS2 surfaces on SiO2citations
- 2023High‐Performance Monolayer MoS 2 Field‐Effect Transistors on Cyclic Olefin Copolymer‐Passivated SiO 2 Gate Dielectriccitations
- 2023Regulating Li‐Ion Transport through Ultrathin Molecular Membrane to Enable High‐Performance All‐Solid‐State–Batterycitations
- 2023Regulating Li‐Ion Transport through Ultrathin Molecular Membrane to Enable High‐Performance All‐Solid‐State–Batterycitations
- 2022Exciton spectroscopy and diffusion in MoSe2-WSe2 lateral heterostructures encapsulated in hexagonal boron nitride
- 2022Exciton spectroscopy and diffusion in MoSe2-WSe2 lateral heterostructures encapsulated in hexagonal boron nitride
- 2022Patterned Growth of Transition Metal Dichalcogenide Monolayers and Multilayers for Electronic and Optoelectronic Device Applications.
- 2022Patterned Growth of Transition Metal Dichalcogenide Monolayers and Multilayers for Electronic and Optoelectronic Device Applicationscitations
- 2022Chemical Vapor Deposition of High‐Optical‐Quality Large‐Area Monolayer Janus Transition Metal Dichalcogenidescitations
- 2022Chemical Vapor Deposition of High‐Optical‐Quality Large‐Area Monolayer Janus Transition Metal Dichalcogenidescitations
- 20211D p–n Junction Electronic and Optoelectronic Devices from Transition Metal Dichalcogenide Lateral Heterostructures Grown by One‐Pot Chemical Vapor Deposition Synthesiscitations
- 2021Wafer scale synthesis of organic semiconductor nanosheets for van der Waals heterojunction devicescitations
- 2020Scalable functionalization of optical fibers using atomically thin semiconductors
- 2020Scalable functionalization of optical fibers using atomically thin semiconductorscitations
- 2019Accessing high optical quality of MoS2 monolayers grown by chemical vapor deposition
- 2018Lateral heterostructures of two-dimensional materials by electron-beam induced stitchingcitations
- 2014Patterning of Epitaxial Perovskites from Micro and Nano Molded Stencil Maskscitations
- 2010Microstructure and field emission characteristics of ZnO nanoneedles grown by physical vapor depositioncitations
Places of action
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document
Accessing high optical quality of MoS2 monolayers grown by chemical vapor deposition
Abstract
Chemical vapor deposition (CVD) allows growing transition metal dichalcogenides (TMDs) over large surface areas on inexpensive substrates. In this work, we correlate the structural quality of CVD grown MoS$_2$ monolayers (MLs) on SiO$_2$/Si wafers studied by high-resolution transmission electron microscopy (HRTEM) with high optical quality revealed in optical emission and absorption from cryogenic to ambient temperatures. We determine a defect concentration of the order of 10$^{13}$ cm$^{-2}$ for our samples with HRTEM. To have access to the intrinsic optical quality of the MLs, we remove the MLs from the SiO$_2$ growth substrate and encapsulate them in hBN flakes with low defect density, to reduce the detrimental impact of dielectric disorder. We show optical transition linewidth of 5 meV at low temperature (T=4 K) for the free excitons in emission and absorption. This is comparable to the best ML samples obtained by mechanical exfoliation of bulk material. The CVD grown MoS$_2$ ML photoluminescence is dominated by free excitons and not defect s even at low temperature. High optical quality of the samples is further confirmed by the observation of excited exciton states of the Rydberg series. We optically generate valley coherence and valley polarization in our CVD grown MoS$_2$ layers, showing the possibility for studying spin and valley physics in CVD samples of large surface area.