| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Ou, Haiyan
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Topics
Publications (17/17 displayed)
- 2023Novel Photonic Applications of Silicon Carbidecitations
- 2017Effective optimization of surface passivation on porous silicon carbide using atomic layer deposited Al2O3citations
- 2017Effective optimization of surface passivation on porous silicon carbide using atomic layer deposited Al2O3citations
- 2017Low Temperature Photoluminescence of 6H fluorescent SiC
- 2016Electrically driven surface plasmon light-emitting diodes
- 2016Investigations of thin p-GaN light-emitting diodes with surface plasmon compatible metallization
- 2016Surface passivation of nano-textured fluorescent SiC by atomic layer deposited TiO2citations
- 2016Surface passivation of nano-textured fluorescent SiC by atomic layer deposited TiO2citations
- 2015A new type of white light-emitting diode light source basing on fluorescent SiC
- 2015A new type of white light-emitting diode light source basing on fluorescent SiC
- 2013Doping and stability of 3C-SiC: from thinfilm to bulk growth
- 2012Fluorescent SiC as a new material for white LEDscitations
- 2012Crystal growth and characterization of fluorescent SiC
- 2008Ge nanoclusters in PECVD-deposited glass caused only by heat treatmentcitations
- 2007Ge nanoclusters in PECVD-deposited glass after heat treating and electron irradiationcitations
- 2006Strained silicon as a new electro-optic materialcitations
- 2004GE NANOCLUSTERS IN PLANAR GLASS WAVEGUIDES DEPOSITED BY PECVD
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document
GE NANOCLUSTERS IN PLANAR GLASS WAVEGUIDES DEPOSITED BY PECVD
Abstract
Germanium (Ge) has been widely used as the dopant in the core layer of planar glass waveguides to increase the refractive index because it gives a small propagation loss. Plasma enhanced chemical vapour deposition (PECVD) and flame hydrolysis deposition (FHD) are two main material deposition methods for waveguide components. For the first time to our best knowledge, this paper reports the formation of Ge nanoclusters in glass thin films deposited by using PECVD. Ge nanoclusters in glass have been demonstrated to have great potential for application to the nonlinear waveguide components. In this work we study the size and distribution of the nanoclusters by transmission electron microscopy (TEM) and Raman spectroscopy. The formation of the clusters is investigated by varying the Ge concentration in the glass and changing the annealing conditions such as temperature, atmosphere and time.The combined effect of a strong nonlinear glass material and a material platform that is well known from standard planar lightwave components makes this Ge nanoclusters material very promising for optical nonlinear waveguide components that are readily fabricated by using the same processing as standard waveguide components.