| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Wang, Shuncai
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2020Simulations of fluid flow, mass transport and current distribution in a parallel plate flow cell during nickel electrodepositioncitations
- 2019Structure-property relationships in suspension HVOF nano-TiO2 coatingscitations
- 2019Structure-property relationships in suspension HVOF nano-TiO 2 coatingscitations
- 2016Evolution of microstructure in AZ91 alloy processed by high-pressure torsion
- 2015Fabrication of tin sulphide and emerging transition metal di-chalcogenides by CVD
- 2015Superplastic behaviour of AZ91 magnesium alloy processed by high– pressure torsioncitations
- 2015The formation of nanostructured surfaces by electrochemical techniques: a range of emerging surface finishes. Part 2: examples of nanostructured surfaces by plating and anodising with their applicationscitations
- 2008The study of aluminium anodes for high power density Al/Air batteries with brine electrolytescitations
Places of action
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conferencepaper
Fabrication of tin sulphide and emerging transition metal di-chalcogenides by CVD
Abstract
Graphene, one of the most important two dimensional (2D) materials, has been attracting increasing interest and new applications in nano-scale electronic and photonic applications. The zero bandgap of graphene, however, has restricted its use in some optoelectronic applications. Recently, transition metal di-chalcogenides (TMDCs) such as MoS<sub>2</sub>, MoSe<sub>2</sub>, WS<sub>2</sub> and WSe<sub>2</sub> have become a noteworthy complimentary material to graphene sharing many of its properties [1]. They may however offer properties that are unattainable in graphene since TMDCs offer tuneability through both composition and number of layers, allowing a bandgap transition from indirect to, with the single layer, direct. The use of chalcogenide thin films such as CuInGaSe<sub>2</sub> and CdTe in solar cells have been commercialized but the search for low cost, low toxicity and earth abundant high efficiency absorbing materials remains under investigation. Tin mono-sulphide, a p-type semiconductor with a band gap of ~1.3 eV, has attracted great interest for the use as an absorber layer in chalcogenide thin film solar cells due to its desirable properties. In addition, TMDCs are now emerging in the thin film photovoltaic [2] and photo-catalyst [3] applications. Chemical vapour deposition (CVD) technology has the advantage of offering conformal, scalable, and controllable thin film growth on a variety of different substrates. Here we report our recent developments in CVD technology for Sn-S and 2D TMDCs materials, in particularly MoS<sub>2</sub> and WS<sub>2</sub>. These chalcogenide thin films have been deposited by CVD onto various substrates at room temperature then annealed at different temperatures with the aim of optimizing the properties of the thin films to achieve the required phase. These annealed thin films were further characterized with SEM, TEM, EDX, XRD, Raman and UV-VIS-NIR spectroscopy. The preliminary results of these CVD-grown chalcogenide thin films show great promise for energy applications.