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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Boyall, N. M.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (3/3 displayed)
- 2003Selected techniques for examining the electrical, optical and spatial properties of extended defects in semiconductors
- 2003Simultaneous TEM and cathodoluminescence imaging of non uniformity in in 0.1Ga 0.9N quantum wells
- 2003Combined TEM-CL investigation of inhomogeneities in GaN epilayers and InGaN quantum wells
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article
Combined TEM-CL investigation of inhomogeneities in GaN epilayers and InGaN quantum wells
Abstract
A TEM fitted with a cathodoluminescence (CL) light collector and an optical spectrometer has been used to investigate spatially and spectrally resolved luminescence phenomena in two epitaxial nitride systems. Luminescence from an InxGa1-xN (x=0.101) quantum well was found to be inhomogeneous on the scale of -0.1 mum, but line-scans recorded at and near the peak of quantum well emission (3.06eV, 405nm) did not implicate any particular physical mechanism. Spectroscopy of (1100)GaN/(100)gammaLiAlO(2) revealed a defect related peak at about 3.3eV. Using diffraction contrast imaging and monochromatic CL line-scans in the TEM it was shown that this emission is directly correlated to intrinsic basal plane stacking faults in the GaN.