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Boyall, N. M.
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Publications (3/3 displayed)
- 2003Selected techniques for examining the electrical, optical and spatial properties of extended defects in semiconductors
- 2003Simultaneous TEM and cathodoluminescence imaging of non uniformity in in 0.1Ga 0.9N quantum wells
- 2003Combined TEM-CL investigation of inhomogeneities in GaN epilayers and InGaN quantum wells
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article
Selected techniques for examining the electrical, optical and spatial properties of extended defects in semiconductors
Abstract
Three methods in semiconductor defect analysis are described with examples and appraisal of their capbilities; an electron beam induced current method (R-EBIC) is shown to determine the sense of band bending at grain boundaries in the CdTe-CdS system. Cathodoluminescence in the TEM has demonstrated a link between stacking faults and 3.26eV luminescence in GaN. Statistical analysis of spatial pattern appolied to 'v-pit' distributions in InGaN structures on sapphire demonstrates the pits to be correlatied on the scale of 60-120nm.