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| Naji, M. |
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| Motta, Antonella |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Petrov, R. H. | Madrid |
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| Casati, R. |
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| Kočí, Jan | Prague |
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| Azam, Siraj |
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| Ali, M. A. |
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| Azevedo, Nuno Monteiro |
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Boyall, N. M.
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Publications (3/3 displayed)
- 2003Selected techniques for examining the electrical, optical and spatial properties of extended defects in semiconductors
- 2003Simultaneous TEM and cathodoluminescence imaging of non uniformity in in 0.1Ga 0.9N quantum wells
- 2003Combined TEM-CL investigation of inhomogeneities in GaN epilayers and InGaN quantum wells
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article
Simultaneous TEM and cathodoluminescence imaging of non uniformity in in 0.1Ga 0.9N quantum wells
Abstract
Monochromatic cathodoluminescence (CL) imaging of metal-organic vapour phase epitaxy (MOVPE) grown In(0.1)Ga(0.9)N single quantum wells (QW) has been performed in a scanning transmission electron microscope (STEM). Spatially resolved fluctuations in the CL emission wavelength and intensity of the QW luminescence were recorded. The presence of regions with luminescent features asymmetrically distributed either side of the QW peak emission was inferred. These fluctuations may be attributed to, by for example, variations of ±0.01 in the In fraction of the In(0.1)Ga(0.9)N alloy, to changes of up to 0.6nm in the QW thickness. However these factors do not explain the gross fluctuations in QW emission intensity observed in TEM-CL on the scale of approximately one micron.