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| Naji, M. |
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| Azevedo, Nuno Monteiro |
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Engelhard, Mark H.
in Cooperation with on an Cooperation-Score of 37%
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Publications (4/4 displayed)
- 2020Hole-Trapping-Induced Stabilization of Ni4 + in SrNiO3 /LaFeO3 Superlattices.citations
- 2012Inhibition of trace element release during Fe(II)-activated recrystallization of Al-, Cr-, and Sn-substituted goethite and hematitecitations
- 2006Pressure-temperature dependence of nanowire formation in the arsenic-sulfur system
- 2005Surface Electronic Properties and Site-Specific Laser Desorption Processes of Highly Structured Nanoporous MgO Thin Filmscitations
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article
Pressure-temperature dependence of nanowire formation in the arsenic-sulfur system
Abstract
Nanowire Formation in Arsenic TrisulfideBrian J. Riley, S.K. Sundaram*, Bradley R. Johnson, Mark Engelhard Pacific Northwest National Laboratory, PO Box 999, Richland, WA 99352 * Corresponding author: Phone: 509-373-6665; Fax: 509-376-3108, E-mail: sk.Sundaram@pnl.gov Abstract:Arsenic trisulfide (As2S3) nanowires, nano-droplets, and micro-islands were synthesized on fused silica substrates, using a sublimation-condensation process at reduced pressures (70 mtorr – 70 torr) in a sealed ampoule.Microstructural control of the deposited thin film was achieved by controlling initial pressure, substrate temperature and substrate surface treatment.Microstructures were characterized using scanning electron microscopy (SEM), and energy dispersive spectrometry (EDS).Surface topography and chemistry of the substrates were characterized using x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM).Semi-quantitative image analysis and basic curve-fitting were used to develop empirical models to mathematically describe the variation of microstructure as a function of initial pressure and substrate temperature and map out the regions of different microstructures in P-T space.Thermodyamic properties (available from literature) of this system are also incorporated in this map.Nanowires of an amorphous, transparent in visible-LWIR region, semi-conducting material, like As2S3, provide new opportunities for the development of novel nano-photonic and electronic devices.Additionally, this system provides an excellent opportunity to model (and control) microstructure development from nanometer to micron scales in a physical vapor deposition process, which is of great value to nanoscience and nanotechnology in general.