Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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Materials Map under construction

The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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Naji, M.
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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (5/5 displayed)

  • 2022Screen-printed bismuth telluride nanostructured composites for flexible thermoelectric applications21citations
  • 2020Poly(N-isopropylacrylamide) based thin microgel films for use in cell culture applications88citations
  • 2019Electrochemical metallization ReRAMs (ECM) - Experiments and modelling: General discussion6citations
  • 2018Compositionally tunable ternary Bi2(Se1-xTex)3 and (Bi1-ySby)2Te3 thin films via low pressure chemical vapor deposition18citations
  • 2012Edge termination design improvements for 10 kV 4H-SiC bipolar diodescitations

Places of action

Chart of shared publication
Yong, S.
1 / 2 shared
Sethi, Vikesh
1 / 4 shared
Nandhakumar, Iris
1 / 9 shared
Beeby, Steve
1 / 45 shared
Newbrook, Daniel W.
1 / 8 shared
Amin, A.
1 / 3 shared
Dinelli, F.
1 / 4 shared
Prodromakis, T.
2 / 5 shared
D., Evans N.
1 / 1 shared
Buratti, E.
1 / 2 shared
Sanzari, I.
1 / 1 shared
Bertoldo, M.
1 / 19 shared
G., Tusan C.
1 / 1 shared
Reid, E.
1 / 1 shared
Jura, M.
1 / 2 shared
Richards, Sp
1 / 1 shared
Levason, W.
1 / 2 shared
Reid, G.
1 / 1 shared
De Groot, Ch
1 / 2 shared
Hector, Al
1 / 2 shared
Benjamin, Sl
1 / 1 shared
Gurnani, C.
1 / 1 shared
Hawken, Sl
1 / 1 shared
Stenning, Gbg
1 / 6 shared
Brosselard, Pierre
1 / 5 shared
Berthou, Maxime
1 / 2 shared
Godignon, P.
1 / 2 shared
Planson, Dominique
1 / 22 shared
Nguyen, D., M.
1 / 1 shared
Vergne, B.
1 / 2 shared
Phung, Luong Viêt
1 / 7 shared
Chart of publication period
2022
2020
2019
2018
2012

Co-Authors (by relevance)

  • Yong, S.
  • Sethi, Vikesh
  • Nandhakumar, Iris
  • Beeby, Steve
  • Newbrook, Daniel W.
  • Amin, A.
  • Dinelli, F.
  • Prodromakis, T.
  • D., Evans N.
  • Buratti, E.
  • Sanzari, I.
  • Bertoldo, M.
  • G., Tusan C.
  • Reid, E.
  • Jura, M.
  • Richards, Sp
  • Levason, W.
  • Reid, G.
  • De Groot, Ch
  • Hector, Al
  • Benjamin, Sl
  • Gurnani, C.
  • Hawken, Sl
  • Stenning, Gbg
  • Brosselard, Pierre
  • Berthou, Maxime
  • Godignon, P.
  • Planson, Dominique
  • Nguyen, D., M.
  • Vergne, B.
  • Phung, Luong Viêt
OrganizationsLocationPeople

conferencepaper

Edge termination design improvements for 10 kV 4H-SiC bipolar diodes

  • Brosselard, Pierre
  • Berthou, Maxime
  • Godignon, P.
  • Planson, Dominique
  • Nguyen, D., M.
  • Huang, R.
  • Vergne, B.
  • Phung, Luong Viêt
Abstract

International audience ; 10 kV class 4H-SiC bipolar diodes have been fabricated. Two different edge terminations (Mesa/JTE or MESA/JTE with JTE rings) with two different junction bend radius have been designed and tested. Measurement results show that the inclusion of JTE rings improve the edge termination efficiency. The measurements indicate also better reverse performances of diodes with large bend radius.

Topics
  • inclusion