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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Deleruyelle, Damien
Institut National des Sciences Appliquées de Lyon
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (26/26 displayed)
- 2024Development of ferroelectric and antiferroelectric H1-xZrxO2-based capacitors for non-volatile memories and power supply applications
- 2024Serendipity in materials science: how a simple doping leads to novel and outstanding properties in simple dielectric HfO2 !
- 2024Stabilization of low dimensional ferroelectric HfZrO2 film
- 2023How ALD deposition analysis can help PVD deposition process!
- 2023How ALD deposition analysis can help PVD deposition process!
- 2023Engineering the nano and micro structures of sputtered HfZrO2 thin films
- 2023Engineering the nano and micro structures of sputtered HfZrO2 thin films
- 2023Interplay between Strain and Defects at the Interfaces of Ultra‐Thin Hf 0.5 Zr 0.5 O 2 ‐Based Ferroelectric Capacitorscitations
- 2023Interplay between Strain and Defects at the Interfaces of Ultra‐Thin Hf 0.5 Zr 0.5 O 2 ‐Based Ferroelectric Capacitorscitations
- 2023Interface engineering between HfZrO2 thin films and electrodes for enhanced ferroelectricity
- 2023Interface engineering between HfZrO2 thin films and electrodes for enhanced ferroelectricity
- 2022Fabrication process for sub-8 nm HfZrO2-based ferroelectric tunnel junctions with enhanced properties
- 2022Ferroelectricity Improvement in Ultra-Thin Hf0.5Zr0.5O2 Capacitors by the Insertion of a Ti Interfacial Layercitations
- 2022Ferroelectricity Improvement in Ultra-Thin Hf0.5Zr0.5O2 Capacitors by the Insertion of a Ti Interfacial Layercitations
- 2022A multiscale study of the structure, chemistry and ferroelectric properties of epitaxial sol-gel PbZr0.2Ti0.8O3 films for nanomechanical switching
- 2022A multiscale study of the structure, chemistry and ferroelectric properties of epitaxial sol-gel PbZr0.2Ti0.8O3 films for nanomechanical switching
- 2022How to play on the fabrication process of HfZrO2 ferroelectric thin film to enhance its physical properties
- 2021Electrical Characterisation of HfZrO2 Ferroelectric Tunnel Junctions for Neuromorphic Application
- 2021Bottom electrodes impact on Hf0.5Zr0.5O2 ferroelectric tunnel junctions
- 2021Bottom electrodes impact on Hf0.5Zr0.5O2 ferroelectric tunnel junctions
- 2021Effect of bottom electrodes on HZO thin film properties
- 2021Impact of a dielectric layer at TiN/HfZrO2 interface for ferroelectric tunnel junctions applications
- 2021Impact of a dielectric layer at TiN/HfZrO2 interface for ferroelectric tunnel junctions applications
- 2021Role of ultra-thin Ti and Al interfacial layers in HfZrO2 ferroelectric tunnel junctions
- 2021Role of ultra-thin Ti and Al interfacial layers in HfZrO2 ferroelectric tunnel junctions
- 2014Photo-Cross-Linked Diblock Copolymer Micelles: Quantitative Study of Photochemical Efficiency, Micelles Morphologies and their Thermal Behaviorcitations
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document
Fabrication process for sub-8 nm HfZrO2-based ferroelectric tunnel junctions with enhanced properties
Abstract
Keeping the miniaturisation pace in the modern semiconductor technology, while chasing an increased computing efficiency, has stimulated the research to focus on novel computing paradigms. One of these is neuromorphic engineering, which aims at the physical implementation of devices mimicking biological neuron and synapses. In this context, memristors based on ferroelectric material are promising candidates to implement synaptic functions. For instance ferroelectric tunnel junction (FTJ) memristors, based on HfZrO2 (HZO) have shown synaptic learning abilities [1]. In addition, HZO processes are already fully compatible with the CMOS industry, with oxide layers thinner than 10 nm. In this work we present a comparative study of different HZO-based FTJs. By interface engineering, we aimed at improving the structural and electrical performances of ultra-thin ferroelectric HZO films. The HZO was synthesized by magnetron sputtering from a Hf0.5Zr0.5O2 ceramic target and subsequently crystallized by rapid thermal annealing [2]. We compared the structural properties and the electrical performances of sub-8 nm HZO layers sandwiched between bottom and top electrodes made of titanium nitride or tungsten. Furthermore, we probed the effect on the ferroelectric properties of HZO of the insertion of an ultra-thin titanium layer at the electrode/HZO interface. The microstructure and the chemical properties of HZO were investigated by means of glancing incidence X-ray diffraction, transmission electron microscopy, and electron energy loss spectroscopy. Electrical characterization was conducted using the positive-up-negative-down-technique and by the acquisition of current vs voltage characteristics. We propose optimized stacks with enhanced ferroelectricity, which are considered for the implementation of FTJs, and for the demonstration of synaptic learning mechanisms for neuromorphic applications.References: [1] L. Chen et al. Nanoscale, vol. 10, no. 33, pp. 15826–15833, 2018. [2] J. Bouaziz, et al., ACS Applied Electronic Materials 1 (9), 1740-1745, 2019.