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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Infante Ingrid, C.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2023VO2 stabilization on Si for memristor in neuromorphic computing applications
- 2023Interplay between Strain and Defects at the Interfaces of Ultra‐Thin Hf 0.5 Zr 0.5 O 2 ‐Based Ferroelectric Capacitorscitations
- 2023Thermal information processing using phase change materials
- 2021Electrical Characterisation of HfZrO2 Ferroelectric Tunnel Junctions for Neuromorphic Application
- 2021Développement d’un capteur environnemental ultra-basse consommation à base de SnO2 en technologie CMOS FDSOI
- 2021Structure, chemical analysis, and ferroelectric properties of chemical solution derived epitaxial PbZr$_{0.2}$Ti$_{0.8}$O$_3$ films for nanomechanical switching
- 2021Impact of a dielectric layer at TiN/HfZrO2 interface for ferroelectric tunnel junctions applications
- 2021Role of ultra-thin Ti and Al interfacial layers in HfZrO2 ferroelectric tunnel junctions
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document
Electrical Characterisation of HfZrO2 Ferroelectric Tunnel Junctions for Neuromorphic Application
Abstract
Ferroelectric Tunnel Junctions (FTJ), which can modulate their electro-resistance depending on the polarisation configuration, have demonstrated multi-state, synaptic behaviour [1]. Hf0.5Zr0.5O2 (HZO) based FTJs are an ideal solution for the industrial implementation of brain inspired computing thanks to the low annealing temperature of HZO and its full compatibility with industrial processes. In this work, we present the development of HZO-based FTJs on silicon substrates and their electrical characterisation. A TiN/HZO/Al2O3/TiN structure was fabricated by reactive magnetron sputtering with 11 nm of HZO crystallised using rapid thermal annealing [2,3]. The dielectric layer of Al2O3 was formed from the deposition of Al and the scavanging of oxygen from the HZO layer, leading to increased conductance and enhancing the asymmetry of the junction to reach higher electro-resistance values. The structural properties were investigated by X-ray reflectometry and grazing incidence X-ray diffraction. Positive-Up-Negative-Down measurements with engineered pulse parameters along with quasi-static current-voltage measurements were conducted to evaluate and control the ferroelectric switching of the devices together with their electro-resistance. Cycling measurements were carried out to investigate the evolution of the polarisation and of the resistance ratio until breakdown. Dominant conduction mechanisms across the junction were evaluated by means of in temperature current-voltage measurements and modelling.References: [1] Boyn, S., Grollier, J., Lecerf, G. et al., Nat Commun 8, 14736 (2017). [2] Bouaziz, J. et al., APL Materials 7, 081109 (2019). [3] Bouaziz, PR Romeo, N Baboux, B VilquinACS Applied Electronic Materials 1, 1740-1745 (2019)