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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Edoff, Marika
Uppsala University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (26/26 displayed)
- 2024High-concentration silver alloying and steep back-contact gallium grading enabling copper indium gallium selenide solar cell with 23.6% efficiencycitations
- 2023Silver Alloying in Highly Efficient CuGaSe 2 Solar Cells with Different Buffer Layerscitations
- 2023Cu(In,Ga)Se2 based ultrathin solar cells the pathway from lab rigid to large scale flexible technologycitations
- 2023Low energy muon study of the p-n interface in chalcopyrite solar cells
- 2023Silver Alloying in Highly Efficient CuGaSe2 Solar Cells with Different Buffer Layerscitations
- 2021Thermodynamic stability, phase separation and Ag grading in (Ag,Cu)(In,Ga)Se2 solar absorberscitations
- 2021Alkali Dispersion in (Ag,Cu)(In,Ga)Se-2 Thin Film Solar Cells-Insight from Theory and Experimentcitations
- 2021Alkali dispersion in (Ag,Cu)(In,Ga)Se2 thin film solar cells – Insight from theory and experimentcitations
- 2021High-Performance and Industrially Viable Nanostructured SiOx Layers for Interface Passivation in Thin Film Solar Cellscitations
- 2020Amorphous tin-gallium oxide buffer layers in (Ag,Cu)(In,Ga)Se2 solar cellscitations
- 2020Thermodynamic stability, phase separation and Ag grading in (Ag,Cu)(In,Ga)Se-2 solar absorberscitations
- 2020Comparison of Sulfur Incorporation into CuInSe(2)and CuGaSe(2)Thin-Film Solar Absorberscitations
- 2019Rear Optical Reflection and Passivation Using a Nanopatterned Metal/Dielectric Structure in Thin-Film Solar Cellscitations
- 2019Atomic layer deposition of amorphous tin-gallium oxide filmscitations
- 2019Modelling Supported Design of Light Management Structures in Ultra-Thin Cigs Photovoltaic Devicescitations
- 2018Passivation of Interfaces in Thin Film Solar Cells: Understanding the Effects of a Nanostructured Rear Point Contact Layercitations
- 2018Insulator Materials for Interface Passivation of Cu(In,Ga)Se-2 Thin Filmscitations
- 2017CdS and Zn1−xSnxOy buffer layers for CIGS solar cells
- 2017Cd and Cu Interdiffusion in Cu(In, Ga)Se2/CdS Hetero-Interfaces
- 2017ALD of phase controlled tin monosulfide thin films
- 2015Investigating the electronic properties of Al2O3/Cu(In, Ga)Se-2 interfacecitations
- 2014Potential-induced optimization of ultra-thin rear surface passivated CIGS solar cellscitations
- 2014Optimizing Ga-profiles for highly efficient Cu(In,Ga)Se2 thin film solar cells in simple and complex defect modelscitations
- 2013Development of Rear Surface Passivated Cu(In,Ga)Se2 Thin Film Solar Cells with Nano-Sized Local Rear Point Contactscitations
- 2013Surface engineering in Cu(In,Ga)Se2 solar cellscitations
- 2011Effect of gallium grading in Cu(In,Ga)Se2 solar-cell absorbers produced by multi-stage coevaporationcitations
Places of action
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document
Cd and Cu Interdiffusion in Cu(In, Ga)Se2/CdS Hetero-Interfaces
Abstract
We report a detailed characterization of an industry-like prepared Cu(In, Ga)Se 2 (CIGS)/CdS heterojunction by scanning transmission electron microscopy and photoluminescence (PL). Energy dispersive X-ray spectroscopy shows the presence of several regions in the CIGS layer that are Cu deprived and Cd enriched, suggesting the segregation of Cd-Se. Concurrently, the CdS layer shows Cd-deprived regions with the presence of Cu, suggesting a segregation of Cu-S. The two types of segregations are always found together, which, to the best of our knowledge, is observed for the first time. The results indicate that there is a diffusion process that replaces Cu with Cd in the CIGS layer and Cd with Cu in the CdS layer. Using a combinatorial approach, we identified that this effect is independent of focused-ion beam sample preparation and of the transmission electron microscopy grid. Furthermore, PL measurements before and after an HCl etch indicate a lower degree of defects in the postetch sample, compatible with the segregates removal. We hypothesize that Cu 2-x Se nanodomains react during the chemical bath process to form these segregates since the chemical reaction that dominates this process is thermodynamically favorable. These results provide important additional information about the formation of the CIGS/CdS interface.