| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Sadewasser, Sascha
International Iberian Nanotechnology Laboratory
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2023Towards All-Non-Vacuum-Processed Photovoltaic Systems: A Water-Based Screen-Printed Cu(In,Ga)Se2 Photoabsorber with a 6.6% Efficiencycitations
- 2021Novel Polymorph of GaSecitations
- 2021Efficient reSe2 photodetectors with CVD single-crystal graphene contactscitations
- 2021Scanning Transmission Electron Microscopy Investigations of an Efficiency Enhanced Annealed Cu(In1-xGax)Se2 Solar Cells with Sputtered Zn(O,S) Buffer Layer
- 2019Micro-Solar Cells By Electrodeposition into a Microelectrode Array – Effect of Dot Diameter
- 2019Evidence of Reversible Oxidation at CuInSe2 Grain Boundaries
- 2018Passivation of Interfaces in Thin Film Solar Cells: Understanding the Effects of a Nanostructured Rear Point Contact Layercitations
- 2017CdS and Zn1−xSnxOy buffer layers for CIGS solar cells
- 2017Epitaxial CuInSe2 thin films grown by molecular beam epitaxy and migration enhanced epitaxycitations
- 2017Cd and Cu Interdiffusion in Cu(In, Ga)Se2/CdS Hetero-Interfaces
- 2012Junction formation of Cu3BiS3 investigated by Kelvin probe force microscopy and surface photovoltage measurements
- 2012Junction formation of Cu3BiS3 investigated by Kelvin probe force microscopy and surface photovoltage measurements
- 2011Chalcopyrite Semiconductors for Quantum Well Solar Cellscitations
- 2010Optoelectronic evaluation of the nanostructuring approach to chalcopyrite-based intermediate band materialscitations
Places of action
| Organizations | Location | People |
|---|
document
CdS and Zn1−xSnxOy buffer layers for CIGS solar cells
Abstract
Thin film solar cells based on Cu(In,Ga)Se2 (CIGS), where just the buffer layer is changed, were fabricated and studied. The effects of two different buffer layers, CdS and ZnxSn1−xOy (ZnSnO), are compared using several characterization techniques. We compared both devices and observe that the ZnSnO-based solar cells have similar values of power conversion efficiency as compared to the cells with CdS buffer layers. The ZnSnO-based devices have higher values in the short-circuit current (Jsc) that compensate for lower values in fill factor (FF) and open circuit voltage (Voc) than CdS based devices. Kelvin probe force microscopy (KPFM) results indicate that CdS provides junctions with slightly higher surface photovoltage (SPV) than ZnSnO, thus explaining the lower Voc potential for the ZnSnO sample. The TEM analysis shows a poly-crystalline ZnSnO layer and we have not detected any strong evidence of diffusion of Zn or Sn into the CIGS. From the photoluminescence measurements, we concluded that both samples are being affected by fluctuating potentials, although this effect is higher for the CdS sample.