Materials Map

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (1/1 displayed)

  • 2023Spin-polarized two-dimensional electron/hole gas at the interface of non-magnetic semiconducting half-Heusler compounds: Modified Slater-Pauling rule for half-metallicity at the interfacecitations

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Galanakis, Iosif
1 / 4 shared
Ghosh, Sukanya
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Sanyal, Biplab
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Sasioglu, Ersoy
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Mertig, Ingrid
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2023

Co-Authors (by relevance)

  • Galanakis, Iosif
  • Ghosh, Sukanya
  • Sanyal, Biplab
  • Sasioglu, Ersoy
  • Mertig, Ingrid
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document

Spin-polarized two-dimensional electron/hole gas at the interface of non-magnetic semiconducting half-Heusler compounds: Modified Slater-Pauling rule for half-metallicity at the interface

  • Galanakis, Iosif
  • Ghosh, Sukanya
  • Sanyal, Biplab
  • Sasioglu, Ersoy
  • Mertig, Ingrid
  • Gurbuz, Emel
Abstract

Half-Heusler compounds with 18 valence electrons per unit cell are well-known non-magnetic semiconductors. Employing first-principles electronic band structure calculations, we study the interface properties of the half-Heusler heterojunctions based on FeVSb, CoTiSb, CoVSn, and NiTiSn compounds, which belong to this category of materials. Our results show that several of these heterojunction interfaces become not only metallic but also magnetic. The emergence of spin-polarization is accompanied by the formation of two-dimensional electron gas (2DEG) or hole gas (2DHG) at the interface. We qualitatively discuss the origin of the spin polarization at the interfaces on the basis of the Stoner model. For the cases of magnetic interfaces where half-metallicity is also present, we propose a modified Slater-Pauling rule similar to the one for bulk half-metallic half-Heusler compounds. Additionally, we calculate exchange parameters, Curie temperatures and magnetic anisotropy energies for magnetic interfaces. Our study, combined with the recent experimental evidence for the presence of 2DEG at CoTiSb/NiTiSn heterojunctions might motivate future efforts and studies toward the experimental realization of devices using the proposed heterojunctions.

Topics
  • impedance spectroscopy
  • compound
  • semiconductor
  • two-dimensional
  • band structure
  • Curie temperature
  • spin polarization