• Lopatynskyi, Ivan
• Frugynskyi, Marian
• Dziedzic, Andrzej
• Wisz, Grzegorz
• Potera, Piotr
• Virt, Ihor
• Cieniek, Bogumił

Abstract

<jats:title>Abstract</jats:title><jats:p>Aluminium nitride thin films were fabricated using pulsed laser deposition and DC magnetron sputtering. Different technological parameters and the effects of different substrates on the optical and structural parameters of AlN samples were studied. An X-ray diffraction study was performed for the layer deposited on the Si<jats:sub>3</jats:sub>N<jats:sub>4</jats:sub> substrate. A high-energy electron diffraction study was also carried out for the layer deposited on a KCl substrate. Transmission spectra of layers on quartz, sapphire, and glass substrates were obtained. An evaluation of the optical band gap of the obtained layers was carried out (<jats:italic>E<jats:sub>g</jats:sub></jats:italic> form 3.81 to 5.81 eV) and the refractive index was calculated (2.58). The relative density of the film (N1TN-AlN sample) is 1.26 and was calculated using the Lorentz-Lorentz relationship. Layers of aluminium nitride show an amorphous character with a polycrystalline region. It was shown that the properties of AlN films strongly depend on the method, growth conditions, and substrate used.</jats:p>

Topics

• density
• impedance spectroscopy
• amorphous
• x-ray diffraction
• thin film
• electron diffraction
• aluminium
• glass
• glass
• nitride
• pulsed laser deposition