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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Kruszewski, Mirosław
Warsaw University of Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2024Microstructure and Corrosion of Mg-Based Composites Produced from Custom-Made Powders of AZ31 and Ti6Al4V via Pulse Plasma Sinteringcitations
- 2024A comparative study of oxidation behavior of Co4Sb12 and Co4Sb10.8Se0.6Te0.6 skutterudite thermoelectric materials fabricated via fast SHS-PPS routecitations
- 2023Rapid fabrication of Se-modified skutterudites obtained via self-propagating high-temperature synthesis and pulse plasma sintering routecitations
- 2023In-depth analysis of the influence of bio-silica filler (Didymosphenia geminata frustules) on the properties of Mg matrix compositescitations
- 2022Thermoelectric properties of bismuth-doped magnesium silicide obtained by the self-propagating high-temperature synthesiscitations
- 2022Heat Treatment of NiTi Alloys Fabricated Using Laser Powder Bed Fusion (LPBF) from Elementally Blended Powderscitations
- 2022Influence of Ag particle shape on mechanical and thermal properties of TIM jointscitations
- 2022A comparison of the microstructure-dependent corrosion of dual-structured Mg-Li alloys fabricated by powder consolidation methods: Laser powder bed fusion vs pulse plasma sinteringcitations
- 2022Pressureless Direct Bonding of Au Metallized Substrate with Si Chips by Micro-Ag Particlescitations
- 2021Microstructure and Thermoelectric Properties of Doped FeSi2 with Addition of B4C Nanoparticlescitations
- 2020Thermoelectric properties of Cu2S obtained by high temperature synthesis and sintered by IHP methodcitations
- 2019Microstructure and thermoelectric properties of p and n type doped β-FeSi2 fabricated by mechanical alloying and pulse plasma sinteringcitations
- 2018Skutterudite (CoSb3) thermoelectric nanomaterials fabricated by Pulse Plasma in Liquidcitations
- 2017Design of interfacial Cr 3 C 2 carbide layer via optimization of sintering parameters used to fabricate copper/diamond composites for thermal management applicationscitations
- 2014Thermal conductivity enhancement of copper–diamond composites by sintering with chromium additivecitations
- 2011W/steel joint fabrication using the pulse plasma sintering (PPS) methodcitations
Places of action
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article
Thermoelectric properties of bismuth-doped magnesium silicide obtained by the self-propagating high-temperature synthesis
Abstract
Doping is one of the possible ways to significantly increase the thermoelectric properties of many different materials. It has beenconfirmed that by introducing bismuth atoms into Mg sites in the Mg2Si compound, it is possible to increase career concentration and intensifythe effect of phonon scattering, which results in remarkable enhancement in the figure of merit (ZT) value. Magnesium silicide has gainedscientists’ attention due to its nontoxicity, low density, and inexpensiveness. This paper reports on our latest attempt to employ ultrafast selfpropagatinghigh-temperature synthesis (SHS) followed by the spark plasma sintering (SPS) as a synthesis process of doped Mg2Si. Materialswith varied bismuth doping were fabricated and then thoroughly analyzed with the laser flash method (LFA), X-ray diffraction (XRD), scanning electron microscopy (SEM) with an integrated energy-dispersive spectrometer (EDS). For density measurement, the Archimedes method was used. The electrical conductivity was measured using a standard four-probe method. The Seebeck coefficient was calculated from measured Seebeck voltage in the sample subjected to a temperature gradient. The structural analyses showed the Mg2Si phase as dominant and Bi2Mg3 located at grain boundaries. Bismuth doping enhanced ZT for every dopant concentration. ZT = 0:44 and ZT=0.38 were obtained for 3wt% and 2wt% at 770 K, respectively.