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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Richter, Carsten
Leibniz Institute for Crystal Growth
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2024Full Picture of Lattice Deformation in a Ge<sub>1 − x</sub>Sn<sub>x</sub> Micro‐Disk by 5D X‐ray Diffraction Microscopycitations
- 2024The Interplay between Strain, Sn Content, and Temperature on Spatially Dependent Bandgap in Ge1−xSnx Microdiskscitations
- 2024Full Picture of Lattice Deformation in a Ge 1-x Sn x Micro‐Disk by 5D X‐ray Diffraction Microscopycitations
- 2024The Lattice Strain Distribution in GexSn1-x Micro-Disks Investigated at the Sub 100-nm Scale
- 2023In situ compression of micropillars under coherent X-ray diffraction: a case study of experimental and data-analysis constraintscitations
- 2023Dislocation climb in AlN crystals grown at low-temperature gradients revealed by 3D X-ray diffraction imagingcitations
- 2023The Interplay between Strain, Sn Content, and Temperature on Spatially Dependent Bandgap in Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> Microdiskscitations
- 2022Monolithic and catalyst-free selective epitaxy of InP nanowires on Silicon
- 2021Influence of Sr deficiency on structural and electrical properties of SrTiO3 thin films grown by metal–organic vapor phase epitaxycitations
- 2020Electrically driven transient and permanent phase transformations in highly strained epitaxial BiFeO3 thin filmscitations
- 2019LiTaO 3 defect structures by means of forbidden reflections
- 2019Ferroelectric Self-Poling in GeTe Films and Crystals
- 2017Strontium titanate: From symmetry changes to functionalitycitations
- 2016Analysis of modulated $Ho_{2}PdSi_{3}$ crystal structure at Pd K and Ho L absorption edges using resonant elastic X-scatteringcitations
- 2015Dielectric to pyroelectric phase transition induced by defect migrationcitations
- 2014Surface-near modifications of $mathrm{SrTiO_3}$ local symmetry due to nitrogen implantation investigated by grazing incidence XANEScitations
- 2010Stabilität von $mathrm{Mo/B_4C}$-Multilagenspiegeln für Synchrotronstrahlung und resonante Röntgenstreuung an defekt- und kristallfeldinduzierten Elektronendichteanisotropien in Rutil und $mathrm{BaTiO_{3}}$
Places of action
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document
Monolithic and catalyst-free selective epitaxy of InP nanowires on Silicon
Abstract
<jats:title>Abstract</jats:title><jats:p>The integration of both optical and electronic components on a single chip, despite the challenge, holds the promise of compatibility with CMOS technology and high scalability. Among all candidate materials, III-V semiconductor nanostructures are key ingredients for opto-electronics and quantum optics devices, such as light emitters and harvesters. The control over geometry, and dimensionality of the nanostructures, enables one to modify the band structures, and hence provide a powerful tool for tailoring the opto-electronic properties of III-V compounds. One of the most creditable approaches towards such growth control is the combination of using patterned wafer and the self-assembled epitaxy. This work presents monolithically integrated catalyst-free InP nanowires grown selectively on nanotip-patterned (001)Si substrates using gas-source molecular-beam epitaxy. The substrates are fabricated using CMOS nanotechnology. The dimensionality of the InP structures can be switched between two-dimensional nanowires and three-dimensional bulk-like InP islands by thermally modifying the shape of Silicon nanotips, surrounded by the SiO<jats:sub>2</jats:sub> layer during the oxide-off process. The structural and optical characterization of nanowires indicate the coexistence of both zincblende and wurtzite InP crystal phases in nanowires. The two different crystal structures were aligned with a type-II heterointerface.</jats:p>