| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Shan, W.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2008Energetic Beam Synthesis of Dilute Nitrides and Related Alloyscitations
- 2005Highly mismatched alloys for intermediate band solar cells
- 2004Oxygen induced band-gap reduction in ZnOxSe1-x alloyscitations
- 2004Diluted ZnMnTe oxidecitations
- 2004Synthesis and properties of highly mismatched II-O-VI alloyscitations
- 2004Effects of pressure on the band structure of highly mismatched Zn1-yMnyOxTe1-x alloyscitations
- 2004Effect of oxygen on the electronic band structure of II-O-VI alloyscitations
- 2004Synthesis and optical properties of II-O-VI highly mismatched alloyscitations
- 2003Band-gap bowing effects in BxGa1-xAs alloyscitations
- 2003Mutual passivation of group IV donors and isovalent nitrogen in diluted GaNxAs1-x alloyscitations
- 2003Mutual passivation of group IV donors and nitrogen in diluted GaN xAs1-x alloyscitations
- 2003Effect of oxygen on the electronic band structure in ZnOxSe1-x alloyscitations
- 2002Band anticrossing effects in MgyZn1-yTe 1-xSex alloyscitations
- 2000Effect of nitrogen on the electronic band structure of group III-N-V alloys
- 2000Synthesis of III-Nx-V1-x Thin Films by N Ion Implantationcitations
- 2000Effect of nitrogen on the band structure of III-N-V alloys
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document
Synthesis of III-Nx-V1-x Thin Films by N Ion Implantation
Abstract
Dilute III-N<sub><i>x</i></sub>-V<sub><i>1-x</i></sub> alloys were successfully synthesized by nitrogen implantation in GaAs and InP. The fundamental band gap energy for the ion beam synthesized III-N<sub><i>x</i></sub>-V<i><sub>1-x</sub> </i>alloys was found to decrease with increasing N implantation dose in a manner similar to that commonly observed in epitaxially grown GaN<sub><i>x</i></sub>As<i><sub>1-x</sub> </i>and InN<sub><i>x</i></sub>P<sub><i>1-x</i></sub> thin films. The fraction of N occupying anion sites ("active" N) in the GaN<sub style="font-style: italic;">x</sub>As<i><sub>1-x</sub> </i>layers formed by N implantation was thermally unstable and decreased with increasing annealing temperature. In contrast, thermally stable InN<sub><i>x</i></sub>P<sub><i>1-x</i></sub> alloys with N mole fraction as high as 0.012 were synthesized by N implantation in InP. Moreover, the N activation efficiency in InP was at least a factor of two higher than in GaAs under similar processing conditions. The low N activation efficiency (<20%) in GaAs can be improved by co-implanting Ga and N in GaAs.