| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Lundin, Daniel
Linköping University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (24/24 displayed)
- 2025Epitaxial growth of TiZrNbTaN films without external heating by high-power impulse magnetron sputteringcitations
- 2024Plasma electron characterization in electron chemical vapor depositioncitations
- 2023On selective ion acceleration in bipolar HiPIMS: A case study of (Al,Cr)2O3 film growthcitations
- 2023Biased quartz crystal microbalance method for studies of chemical vapor deposition surface chemistry induced by plasma electronscitations
- 2023Corundum-structured AlCrNbTi oxide film grown using high-energy early-arriving ion irradiation in high-power impulse magnetron sputteringcitations
- 2023HiPIMS-grown AlN buffer for threading dislocation reduction in DC-magnetron sputtered GaN epifilm on sapphire substratecitations
- 2021Modeling of high power impulse magnetron sputtering discharges with graphite targetcitations
- 2021Low temperature growth of stress-free single phase alpha-W films using HiPIMS with synchronized pulsed substrate biascitations
- 2021Influence of Metal Substitution and Ion Energy on Microstructure Evolution of High-Entropy Nitride (TiZrTaMe)N1-x (Me = Hf, Nb, Mo, or Cr) Filmscitations
- 2020Chemical vapor deposition of metallic films using plasma electrons as reducing agentscitations
- 2020Low resistivity amorphous carbon-based thin films employed as anti-reflective coatings on coppercitations
- 2019Tuning high power impulse magnetron sputtering discharge and substrate bias conditions to reduce the intrinsic stress of TiN thin filmscitations
- 2018Low temperature (T-s/T-m < 0.1) epitaxial growth of HfN/MgO(001) via reactive HiPIMS with metal-ion synchronized substrate biascitations
- 2018Influence of backscattered neutrals on the grain size of magnetron-sputtered TaN thin filmscitations
- 2017Benefits of energetic ion bombardment for tailoring stress and microstructural evolution during growth of Cu thin filmscitations
- 2017Epitaxial growth of Cu(001) thin films onto Si(001) using a single-step HiPIMS processcitations
- 2014Anti-vibration Engineering in Internal Turning Using a Carbon Nanocomposite Damping Coating Produced by PECVD Processcitations
- 2012Influence of ionization degree on film properties when using high power impulse magnetron sputteringcitations
- 2012Influence of ionization degree on film properties when using high power impulse magnetron sputteringcitations
- 2012An introduction to thin film processing using high-power impulse magnetron sputteringcitations
- 2012A novel high-power pulse PECVD methodcitations
- 2012High power impulse magnetron sputtering dischargecitations
- 2010The HiPIMS Process
- 2008Plasma properties in high power impulse magnetron sputtering
Places of action
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article
An introduction to thin film processing using high-power impulse magnetron sputtering
Abstract
High-power impulse magnetron sputtering (HiPIMS) is a promising sputtering-based ionized physical vapor deposition technique and is already making its way to industrial applications. The major difference between HiPIMS and conventional magnetron sputtering processes is the mode of operation. In HiPIMS the power is applied to the magnetron (target) in unipolar pulses at a low duty factor (andlt;10%) and low frequency (andlt;10 kHz) leading to peak target power densities of the order of several kilowatts per square centimeter while keeping the average target power density low enough to avoid magnetron overheating and target melting. These conditions result in the generation of a highly dense plasma discharge, where a large fraction of the sputtered material is ionized and thereby providing new and added means for the synthesis of tailor-made thin films. In this review, the features distinguishing HiPIMS from other deposition methods will be addressed in detail along with how they influence the deposition conditions, such as the plasma parameters and the sputtered material, as well as the resulting thin film properties, such as microstructure, phase formation, and chemical composition. General trends will be established in conjunction to industrially relevant material systems to present this emerging technology to the interested reader. ; Funding Agencies|Swedish Research Council (VR)|623-2009-7348|