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Publications (4/4 displayed)
- 2020Mid-infrared laser diodes epitaxially grown on on-axis (001) siliconcitations
- 2019Interband cascade Lasers with AlGaAsSb cladding layers emitting at 3.3 µmcitations
- 2017Electrically pumped all photonic crystal 2 nd order DFB lasers arrays emitting at 2.3 μ mcitations
- 2011Towards the experimental demonstration of quantum radiation pressure noisecitations
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article
Mid-infrared laser diodes epitaxially grown on on-axis (001) silicon
Abstract
The direct epitaxial growth of III-V semiconductor lasers on standard, CMOS-compatible, on-axis (001) Si substrates is actively sought for the realization of active photonic integrated circuits. Here we report on the first mid-infrared semiconductor laser epitaxially grown on on-axis Si substrates, i.e., compatible with industry standards. Furthermore, these GaSb-based laser diodes demonstrate low threshold current density, low optical losses, high temperature operation, and high characteristic temperatures. These results represent a breakthrough toward the integration of semiconductor laser sources on Si for smart sensors.