| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Bijkerk, Frederik
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2017In-vacuo growth studies and thermal oxidation of ZrO2 thin films
- 2017Tuning of large piezoelectric response in nanosheet-buffered lead zirconate titanate films on glass substratescitations
- 2017Detection of defect populations in superconductor boron subphosphide B12P2 through X-ray absorption spectroscopycitations
- 2016In-vacuo growth studies of ZrO2 thin films
- 2016Structure of high-reflectance La/B-based multilayer mirrors with partial La nitridationcitations
- 2016Growth kinetics of Ru on Si, SiN and SiO2 studied by in-vacuo low energy ion scattering (LEIS)
- 2016Exploiting the P L2,3 absorption edge for optics: spectroscopic and structural characterization of cubic boron phosphide thin filmscitations
- 2013Engineering optical constants for broadband single layer anti-reflection coatings
- 2012Chemical interactions at the interfaces of Mo/B4C/Si/B4C multilayers upon low-temperature annealing
- 2012Multilayer development for the generation beyond EUV: 6.x nm
Places of action
| Organizations | Location | People |
|---|
article
Exploiting the P L2,3 absorption edge for optics: spectroscopic and structural characterization of cubic boron phosphide thin films
Abstract
The transmission of cubic boron phosphide (c-BP) thin films, prepared by chemical vapor deposition (CVD), was evaluated near the phosphorous L2,3 and boron K absorption edge. The c-BP films were analyzed with transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS) and X-ray absorption near-edge spectroscopy (XANES), to study their structural and chemical properties. The TEM analysis reveals that c-BP initially grows in islands. The merging of the P L2,3, P K and B K absorption edges culminates in a sharp absorption feature starting at 130 eV, showing that c-BP can be used in applications that require a relatively transparent material in the energy range just below that absorption feature. Due to experimental constraints the samples were grown at a temperature significantly below the temperature for optimal crystal growth. XANES analysis showed that, as a result of the reduced crystal quality, the intensities of the absorption transitions are reduced compared to those in high quality crystalline reference samples. Optimizing the quality of the BP films will increase the contrast in transmission across the absorption edge.