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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Srinivasan, A.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2022Resistive switching in polyvinylpyrrolidone/molybdenum disulfide composite-based memory devicescitations
- 2021Reduced graphene oxide (RGO) based optical fiber humidity sensor
- 2018Synthesis of finest superparamagnetic carbon-encapsulated magnetic nanoparticles by a plasma expansion method for biomedical applicationscitations
- 2016Creep behavior of Mg–10Gd–xZn (x=2 and 6wt%) alloyscitations
- 2016Hot tearing characteristics of Mg–2Ca–xZn alloyscitations
- 2015Hot Tearing Susceptibility of Mg-Ca Binary Alloyscitations
- 2015Effect of Zn addition on hot tearing behaviour of Mg–0.5Ca–xZn alloyscitations
- 2014Microstructures and mechanical properties of pure Mg processed by rotary swagingcitations
- 2014Investigations on microstructures, mechanical and corrosion properties of Mg-Gd-Zn alloyscitations
- 2014Corrosion behavior of Mg–Gd–Zn based alloys in aqueous NaCl solutioncitations
- 2013Hot tearing susceptibility of binary MgY alloy castingscitations
- 2013Microstructure, Mechanical and Corrosion Properties of Mg-Gd-Zn Alloyscitations
- 2012Metallurgical characterization of hot tearing curves recorded during solidification of magnesium alloyscitations
- 2012Magnetic properties and spin polarization of Co2Mn(SixSn1-x) alloys containing two L2(1) phasescitations
- 2001Are grammatical representations useful for learning from biological sequence data?— a case studycitations
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article
Resistive switching in polyvinylpyrrolidone/molybdenum disulfide composite-based memory devices
Abstract
<p>Four types of resistive random access memory structures with an active layer comprising: (1) MoS<sub>2</sub> (device A), (2) PVP (device B), (3) PVP and MoS<sub>2</sub> bilayer (device C), and (4) PVP + MoS<sub>2</sub> nanocomposites with 10 (device D), 20 (device E), 30 (device F) and 40 wt% (device G) MoS<sub>2</sub>, have been fabricated with Al and Ag as bottom and top electrodes, respectively. A study of resistive switching and electrical conduction mechanisms of these resistive random access memory modules revealed that devices A and B did not exhibit switching characteristics. Device C showed a combination of bipolar and threshold switching with a low switching voltage of 0.40 V. Device G portrayed bipolar switching at 0.56 V. In device C, space charge-limited conduction with a transition voltage Vtr = 0.24 V was observed, whereas in device G, Ohmic behaviour between 0.0 and 0.22 V, followed by trapping of charge in the 0.22-0.56 V regime before switching, was noticed. Both devices C and G showed a reasonable (≥ 10<sup>2</sup>) ON/OFF ratio. In nanocomposite devices, an increase in MoS<sub>2</sub> content resulted in an increase in electrical conductivity in the Ohmic region, leading to threshold switching at 30 wt% (device F) and ultimately bipolar switching at 40 wt% (device G). These studies have shown that both switching and conduction mechanisms are sensitive to the type and composition of the active layer in the devices studied.</p>